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Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material

A hydride gas phase, uniform technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as not meeting the needs of practical applications

Inactive Publication Date: 2002-12-11
NANJING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is still far from meeting the needs of practical applications.

Method used

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  • Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material
  • Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material
  • Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material

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Embodiment Construction

[0013] figure 1 Due to the limitations of the diameter of the gas path and the inner diameter of the electric furnace, the size of the obtained film material and the uniformity of the film are limited. The effective area of ​​the GaN thin film is approximately 2 cm x 1.5 cm in a nearly elliptical area, while the effective area with a uniform thickness is only in a 1 cm x 1 cm near circular area. The dual-temperature-zone resistance furnace 1 has a high-temperature deposition zone 2, a low-temperature zone 3, a vent pipe 4, and a N 2 Pipeline 5 and NH 3 Pipeline 6, HCl-N with metal gallium source 2 pipeline7.

[0014] Such as figure 2 , 3 Shown: without changing the inner diameter of the electric furnace, two-way (or multi-way, image 3 ) Gallium source transmission pipeline. figure 2 C is a simple schematic diagram of the airflow distribution inside the improved system. It can be seen from the figure that the area of ​​the film deposited after the improvement is incr...

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Abstract

The present invention is homogeneity improving method and device for hybride gaseous epitaxially grown GaN material. In the electric furnace of hydride gaseous epitaxy to grow GaN film material, the single path metal gallium source-HCL-N2 pipeline is divided into multiple path metal gallium source-HCL-N2 pipeline, the transmission homogeneity of reactant GaCl-N2 is improved and reactant GaCl-N2 is conveyed to GaN film material growing region of the electric furnace. Two or more gallium source conveying pipelines result in homogeneously distributed inner gas flow and improved film homogeneity.The grwon GaN film may be as large as 5x4 cm, and the effective film area with homogeneous thickness may reach 4x3 cm or ever larger.

Description

1. Technical field [0001] The invention relates to a method and a device for improving the uniformity of GaN material grown by hydride vapor phase epitaxy (HVPE). 2. Background technology [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide-bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It is used to manufacture light-emitting devices and detectors such as blue, purple, and ultraviolet band...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C30B25/00H01L21/205
Inventor 修向前张荣卢佃清郑有炓顾书林沈波江若链施毅韩平朱顺明胡立群
Owner NANJING UNIV
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