Cross-point diode storage array addressing mfg. technology
A technology at intersections and intersections, applied in nanotechnology, information storage, nanotechnology, etc., can solve problems such as crosstalk, difficulties in reading and writing storage elements, etc.
Inactive Publication Date: 2003-01-08
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
Another disadvantage of these schemes is the crosstalk that occurs between addressed and unaddressed storage elements, which makes reading and writing to a particular storage element very difficult
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[0046] Here, write-only memory circuits, memory systems, addressing and readout circuits, and methods of producing, implementing, and using these circuits and systems are described. In the following description, for the purpose of explanation, specific terms and specific implementation details are cited so as to have a thorough understanding of the present invention. However, it will be apparent to those skilled in the art that these specific details are not necessarily required to practice the present invention.
[0047] In the following description, when referring to "data", it should be understood that the so-called "data" can be represented in various ways depending on the context. For example, in a memory element, "data" may be represented by a voltage level, a magnetic state, or a physical property such as resistance that represents a measurable effect such as voltage and current levels or transitions into a readout circuit . On the other hand, this "data" may be in th...
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A memory array (25) and some addressing circuitry (30) therefor are formed by creating circuit elements (26) at the crossing-points of two layers of electrode conductors (70, 76) that are separated by a layer of a semiconductor material (72). The circuit elements formed at the crossing-points function as data storage devices in the memory array, and function as connections for a permuted addressing scheme for addressing the elements in the array. In order to construct the addressing circuitry, the electrode conductors are fabricated with a controlled geometry at selected crossing-points such that selected circuit elements have increased or decreased cross-sectional area. By applying a programming electrical signal to the electrodes, the electrical characteristics (e.g. resistance) of selected circuit elements can be changed according to the controlled electrode geometry.
Description
technical field [0001] The present invention relates to the field of digital storage circuits, in particular, to the manufacturing technology of addressing and readout circuits for accessing storage elements in cross-point diode storage arrays Background technique [0002] Many consumer appliances today are required to generate and / or consume increasingly large amounts of digital data. For example, portable digital cameras that capture still or moving pictures generate large amounts of digital data representing images. Each digital image requires up to several megabytes (MB) of data storage, which must be available in the camera. To accommodate this type of data storage application, memory with capacities ranging from 10MB to 1 gigabyte (GB) should be relatively inexpensive. Moreover, the power consumption of the memory should be low (for example <<1 watt) and have relatively stable physical characteristics, so as to adapt to the portable working environment powered ...
Claims
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IPC IPC(8): H01L27/10G11C8/10G11C17/16H01L23/525H01L23/538H01L25/10
CPCH01L23/5382G11C8/10H01L25/105G11C17/16H01L2924/12044B82Y10/00H01L2924/0002H01L2225/1064H01L2225/1023H01L2225/1082Y10S257/91H01L23/5256H01L2924/3011H01L2924/00H01L27/10
Inventor C·陶西格R·埃尔德
Owner SAMSUNG ELECTRONICS CO LTD