Operation process of semiconductor device

Abstract

The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current / voltage range in which it has a first differential resistance (Rdiff 1 ) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff 2 ), which is less than the first differential resistance (Rdiff 1 ).

Description

technical field [0001] The invention relates to a method for operating a semiconductor device having a substrate, a conductive strip of semiconductor material attached to the substrate, a first and a second electrical contact, said contact being connected to The conductive strips are connected such that the conductive strips constitute a resistance between the two contacts. Background technique [0002] Although the invention can be used as any semiconductor component with switching properties, the invention and the problem on which it is based will only be described with regard to silicon trigger diodes. [0003] Trigger diodes are semiconductor devices that switch from a blocking state to a conducting state and substantially reduce their differential resistance when the voltage applied between two terminals exceeds a certain value. One known trigger diode is the so-called quadruple diode (four-layer semiconductor switching device), which is also sometimes called a flip di...

AI Technical Summary

Problems solved by technology

[0004] Trigger diodes and other known semiconductor devices capable of on-off control of current or voltage, such as controllable transistors (junction field-effect transistors, N-MOS transistors, etc.), thyristors, bidirectional three-terminal semiconductors Switching elements and diodes or bipolar transistors for high current-forming pulses have the following disadvantages: a. Complex multi-layer structure; b. The adaptability of key parameters is limited by the given manufacturing process; c. Due to the complexity of the working method, the development cost is expensive; d. Expensive and time-consuming processing technology (multiple mask surfaces, etc.); e. Lack of integration with the usual ultra-large-scale processes; f. Lack of stability in station delivery; and g. Large footprint and space in VLSI

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