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Random programmable non-volatile semi-conductor storage

A semiconductor and memory technology, applied in the field of non-volatile semiconductor memory, can solve problems such as power consumption, reliability problems, slow speed, etc., and achieve the effects of saving power, improving performance, and shortening access time

Inactive Publication Date: 2003-07-23
POWERCHIP SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can be very power hungry and, since voltage is applied to each word line, slow in speed
In addition, due to the existence of high voltage, there may also be problems in reliability, such as junction breakdown (junction breakdown) and other situations

Method used

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  • Random programmable non-volatile semi-conductor storage
  • Random programmable non-volatile semi-conductor storage
  • Random programmable non-volatile semi-conductor storage

Examples

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Embodiment Construction

[0028] Please refer to FIG. 2 . FIG. 2 is an equivalent circuit diagram of the NAND non-volatile semiconductor memory 30 of the present invention. As shown in FIG. 2, the NAND memory string block B includes a plurality of rewritable memory cells (memory cell) M, and they are connected in series along the direction of the bit line (bit line) BL1 . Moreover, one end of the memory cell connected in series is electrically connected to the bit line BL1, and a selecting transistor ST is provided at the other end of the memory cell connected in series, and is electrically connected to a source line SL.

[0029] Please refer to FIG. 3 and FIG. 4 . FIG. 3 is a layout diagram of the NAND non-volatile semiconductor memory 30 of the present invention. FIG. 4 is a cross-sectional view of the NAND non-volatile semiconductor memory 30 along the bit line BL1 in FIG. 3 . As shown in Fig. 3 and Fig. 4, NAND type non-volatile semiconductor memory 30 comprises a first conductive type semiconduc...

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Abstract

The non-volatile semi-conductor storage includes the first electric type semi-conductor substrate with the storage area, the second electric type deep well of the semi-conductor substrate being set up at the said storage area and the first electric type shallow ell being setup at the said deep well and separated by a shallow trough insulation layer. Multiple NAND cellblocks are setup at the semi-conductor substrate within the shallow well. Above the substrate of the semi-conductor substrate, there is the bit wire extended to the plug in the shallow well, providing the first prearranged voltage for the shallow well at the programming mode and the second prearranged voltage for the shallow well at the erasion mode.

Description

technical field [0001] The present invention provides a non-volatile semiconductor memory (non-volatile semiconductor memory), in particular relates to a NAND type non-volatile semiconductor memory capable of random programming. Background technique [0002] Since flash (flash) electrically erasable programmable read-only memory (electrically erasableprogrammable read-only memory, EEPROM) has the advantages of high density, etc., in today's rewritable non-volatile (or permanent) data In terms of storage purposes, there are quite a wide range of applications. The main manufacturing process architecture of flash memory can be divided into two types: NOR type and NAND type. The products are program conversion-based storage program flash memory (code flash), and data access-based storage data flash memory (code flash) data flash). The former is mostly used in mobile phones because of its fast program conversion and reading speed, while the latter is used...

Claims

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Application Information

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IPC IPC(8): H01L27/10H01L27/115
Inventor 杨青松沈士杰徐清祥
Owner POWERCHIP SEMICON CORP
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