Self-aligned, programmable phase change memory and method for manufacturing the same

Abstract

The self-aligned programmable phase change memory device is non-volatile memory based on phase change matter, for example, sulfur family compound. The memory device is manufactured in very small area on IC. The manufacture of the self-aligned memory unit needs only 2 relevant array masks to define the bit line and the byte line. The memory unit is defined in the cross of the bit line and the byte line, the width of bit line and the byte line in the self-aligning process will define the size of the memory unit. The memory unit includes selecting module, heating / barrier and phase change memory element.

Description

technical field [0001] The present invention relates to a kind of non-volatile (non-volatile) and high-density integrated circuit (integratedcircuit, IC) storage device (memory devices), and particularly relates to a kind of such as chalcogenides (chalcogenides) phase change material ( phase change)-based storage devices. Background technique [0002] Chalcogenides have been used in the formation of memory cells in integrated circuit memory devices. Representative prior patents in this field include Reinberg's U.S. Patent No. 5,789,758, Harshfield's U.S. Patent No. 6,153,890, Wolstenholme's U.S. Patent No. 6,153,890, Ovshinsky's U.S. Reissue Patent No.RE37259 (U.S. Patent No. 5,687,112 The re-licensing) and other related US patents and so on. [0003] Chalcogenides used in integrated circuit memory devices are substances with multiple solid-state phases, and chalcogenides are converted between these phases by heating, such as Provide electrical current or optical pulses. ...

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Problems solved by technology

In addition, such high density technology has not been applied to phase change memory cells

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