Self-aligned, programmable phase change memory and method for manufacturing the same

A technology for storage devices and manufacturing methods, applied in the field of storage devices based on phase-change materials, capable of solving problems such as phase-change storage units that have not been applied

Inactive Publication Date: 2003-10-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, such high density technology has

Method used

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  • Self-aligned, programmable phase change memory and method for manufacturing the same
  • Self-aligned, programmable phase change memory and method for manufacturing the same
  • Self-aligned, programmable phase change memory and method for manufacturing the same

Examples

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Embodiment Construction

[0047] Please refer to figure 1 , which shows a block diagram of an integrated circuit (integrated circuit, IC) memory device (memory device) according to a preferred embodiment of the present invention. exist figure 1 Among them, the integrated circuit storage device of the present invention includes a self-aligned phase change cell memory array (self-alignedphase change cell memory array) 5 and a substrate (substrate), the circuit system (circuitry) configured on this substrate will A memory array 5 of self-aligned phase change cells is maintained. In the invention, the circuit system includes address decoders, input drivers and output drivers. Therefore, the y-decoder and input driver circuitry 10 and 11 are disposed near the left and right sides of the self-aligned phase change cell memory array 5, and the x-decoder and output sense amplifier (amplifier) ​​circuitry 12 and 13 are disposed near Near the upper and lower sides of the self-aligned phase change unit memory a...

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Abstract

The self-aligned programmable phase change memory device is non-volatile memory based on phase change matter, for example, sulfur family compound. The memory device is manufactured in very small area on IC. The manufacture of the self-aligned memory unit needs only 2 relevant array masks to define the bit line and the byte line. The memory unit is defined in the cross of the bit line and the byte line, the width of bit line and the byte line in the self-aligning process will define the size of the memory unit. The memory unit includes selecting module, heating/barrier and phase change memory element.

Description

technical field [0001] The present invention relates to a kind of non-volatile (non-volatile) and high-density integrated circuit (integratedcircuit, IC) storage device (memory devices), and particularly relates to a kind of such as chalcogenides (chalcogenides) phase change material ( phase change)-based storage devices. Background technique [0002] Chalcogenides have been used in the formation of memory cells in integrated circuit memory devices. Representative prior patents in this field include Reinberg's U.S. Patent No. 5,789,758, Harshfield's U.S. Patent No. 6,153,890, Wolstenholme's U.S. Patent No. 6,153,890, Ovshinsky's U.S. Reissue Patent No.RE37259 (U.S. Patent No. 5,687,112 The re-licensing) and other related US patents and so on. [0003] Chalcogenides used in integrated circuit memory devices are substances with multiple solid-state phases, and chalcogenides are converted between these phases by heating, such as Provide electrical current or optical pulses. ...

Claims

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Application Information

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IPC IPC(8): H01L27/10G11C11/56H01L27/105H01L27/24H01L45/00
CPCH01L45/1675H01L27/2409H01L45/1233G11C2213/72H01L27/2463H01L45/06G11C11/5678G11C11/56H01L45/126G11C13/0004H10B63/20H10B63/80H10N70/231H10N70/826H10N70/8413H10N70/063
Inventor 龙翔澜
Owner MACRONIX INT CO LTD
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