EFT with neck shape channel and mfg. method thereof

Abstract

A fieldistor with neck channel is a dual grid mos filedistor including a channel between source and drain in a structure of a narrow-middle part and two-wide-ends avoiding short effect and reducing serial resistance value and a wrapped gap wall covering the channel and active zone of source / drain for avoiding metallic siliconization. The process method is to form channel, source, drain by photo etching and etching with OD mask and form a wrapped gap wall after depositing grid layer.

Description

technical field [0001] The present invention relates to a field effect transistor (Field Effect Transistor; FET) with a necking channel and a manufacturing method thereof. In particular, it relates to a vertical double gate metal oxide half field effect transistor (MOSFET) with a neck channel and a manufacturing method thereof. Background technique [0002] In recent years, the semiconductor industry has developed vigorously, and integrated circuits have now developed into the field of Ultra Large Scale Integrated Circuit (ULSI). In order to pursue higher density, higher speed and lower power consumption integrated circuits, metal oxide semiconductor devices must continue to shrink. As the integration of semiconductor components increases, the short channel effect becomes more and more serious, so various metal oxide half field effect transistors are proposed to solve the problem of short channel effect (short channel effect), among which the double gate metal oxide half fi...

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Problems solved by technology

[0005] In view of the above-mentioned background of the invention, the existing FINFET uses a rather narrow channel to increase the control sensitivity of the gate voltage to the drain current, and to prevent the short channel effect from occurring, and such a narrow channel will cause a series channel resistance value that is too large problems, causing great difficulties in both design and use

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