Unlock instant, AI-driven research and patent intelligence for your innovation.

Treatment apparatus and method therefor

A processing device and processing method technology, applied in gaseous chemical plating, coating, electrical components, etc., can solve the problem that the amount of particles cannot be detected with high precision, the information with high reliability cannot be fully obtained, and the process control with high precision cannot be performed. And other issues

Inactive Publication Date: 2004-07-21
TOKYO ELECTRON LTD
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, since the diameter of the exhaust pipe is relatively large, the distribution of particles in the exhaust pipe varies greatly, and the amount of particles cannot be detected with high accuracy, and there is a possibility that the reliability of the process will decrease.
[0013] In this way, since the existing processing device that obtains predetermined information from the exhaust gas and controls the process based on the obtained information obtains the information on the gas supply side of the main pump with a relatively large diameter of the low-pressure piping, it is not possible to obtain sufficient reliability. information, there is a danger that high-precision process control cannot be performed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Treatment apparatus and method therefor
  • Treatment apparatus and method therefor
  • Treatment apparatus and method therefor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0068] In the first embodiment, the following processing device is taken as an example for description. The processing device uses titanium tetrachloride (TiCl 4 ) Gas and ammonia (NH 3 ) It is alternately supplied into the processing chamber under vacuum exhaust, and a titanium nitride (TiN) film is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) using the so-called Atomic Layer Deposition (ALD) method on.

[0069] figure 1 The configuration of the processing device 11 of the embodiment is shown.

[0070] Such as figure 1 As shown, the processing device 11 includes a control device 12, a processing chamber 13, a gas supply line 14, and an exhaust line 15.

[0071] The control device 12 controls the overall operation of the processing device 11 related to the film formation process described later. In addition, since it is easy to understand, the details of the operation of the control device 12 are omitted.

[0072] The processing chamber 13...

no. 2 approach

[0113] In the second embodiment, an example of dry cleaning of a processing device that forms a silicon-based film such as silicon oxide on the surface of a processing object such as a semiconductor wafer (hereinafter referred to as a wafer) by plasma processing in a processing chamber. The dry cleaning of the processing device is performed as follows: Make fluorine-based gas (nitrogen trifluoride (NF 3 )) The plasma passes through the processing chamber.

[0114] Figure 5 The configuration of the processing device 11 of the second embodiment is shown. Such as Figure 5 As shown, the processing device 11 includes a control device 12, a processing chamber 13, a clean gas supply line 50, and an exhaust line 15.

[0115] The control device 12 controls the overall operation of the processing device 11 such as film formation processing and cleaning processing described later. In addition, since it is easy to understand, the details of the operation of the control device 12 are omitte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An exhaust line ( 15 ) connected to a chamber ( 13 ) comprises a TMP ( 22 ) and a dry pump ( 23 ). The chamber ( 13 ) and the TMP ( 22 ) are connected by a first exhaust pipe ( 25 ), and the TMP ( 22 ) and the dry pump ( 23 ) are connected by a second exhaust pipe ( 28 ). A measuring section ( 24 ) monitors a partial pressure of TiCl4 or NH3 in an exhaust gas flowing in the second exhaust pipe ( 28 ). Two types of process gases are alternately supplied into the chamber ( 13 ) for a predetermined time, and when the partial pressure of one of the supplied process gases in the exhaust gas is reduced to a predetermined value, a control means ( 12 ) starts supplying the other process gas.

Description

Technical field [0001] The present invention relates to a processing apparatus and a processing method for performing predetermined processing such as film formation processing on a processed object such as a semiconductor wafer. Background technique [0002] At present, with the miniaturization and high integration of semiconductor integrated circuits, the pattern of wiring grooves and the like formed on the surface of substrates such as substrates has been miniaturized. Therefore, in the case of forming a thin film as a base film of the wiring metal, etc., it is necessary to form a very thin film in a fine wiring groove with a uniform and good coating method. In response to such needs, in recent years, a method called Atomic Layer Deposition (ALD) has been developed as a method capable of forming an atomic layer-level film with good film quality. [0003] ALD consists of the following steps, for example. In the example shown below, a case where titanium tetrachloride gas and am...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455C23C16/52H01L21/285H01L21/3065H01L21/31H01L21/768
CPCH01L21/76843C23C16/4412C23C16/52H01L21/28562C23C16/45525
Inventor 河南博松冈孝明
Owner TOKYO ELECTRON LTD