Chemically machinery polishing serum

A polishing slurry and chemical-mechanical technology, applied in polishing compositions, other chemical processes, chemical instruments and methods, etc., can solve the problems of difficulty in adjusting the polishing speed of copper-based metal films, excessive polishing of copper-based metal films, etc., and achieve surface depressions. or the effect of minimizing corrosion

Active Publication Date: 2004-09-01
RENESAS ELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as mentioned above, it is difficult to adjust the polishing rate of the copper film to a desired rate by changing the amount of hydrogen peroxide added in the strongly acidic range where copper tends to be oxidized.
[0015] As described above, according to the prior art, it is difficult to adjust the polishing speed of the copper-based metal film to an ideal range for preventing over-polishing of the copper-based metal film in a strongly acidic range where copper tends to be oxidized

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 3 and comparative example 1 to 8

[0051] As is evident from the results of Examples 1 to 3 and Comparative Examples 1 and 2 shown in Table 1, at pH 3 to 4, the CMP slurry containing 1,2,4-triazole and ammonium nitrate provided increased The copper polishing rate is high, and at the pH deviating from 3 to 4, the practical polishing rate of copper is not obtained.

[0052] As evident from Comparative Examples 3 to 8 shown in Table 1, at pH 2.5 to 5, slurries containing benzotriazole or glycine instead of 1,2,4-triazole provided substantially constant copper polishing rate, which is practically useless.

[0053] These results show that using the CMP slurries of Examples 1 to 3 containing 1,2,4-triazole and having a pH of 3 to 4, suitable polishing rates for copper films can be obtained.

Embodiment 1、4 to 6 and comparative example 9

[0055] As is apparent from the results of Examples 1, 4 to 6 shown in Table 2, the higher the concentration of 1,2,4-triazole, the higher the copper polishing rate. In contrast, when the CMP slurry without 1,2,4-triazole was used in Comparative Example 9, a suitable polishing rate for the copper film could not be obtained.

[0056] These results show that without 1,2,4-triazole, in the presence of ammonium nitrate, no suitable polishing rate for copper can be obtained, and that the polishing rate of copper can be adjusted by changing the concentration of 1,2,4-triazole .

Embodiment 1、7 to 9 and comparative example 10

[0058] As is apparent from the results of Examples 1, 7 to 9 shown in Table 3, the higher the concentration of ammonium nitrate, the higher the copper polishing rate. In contrast, when the CMP slurry without ammonium nitrate was used in Comparative Example 10, a suitable polishing rate for the copper film could not be obtained.

[0059] These results show that without ammonium nitrate, in the presence of 1,2,4-triazole, a suitable polishing rate for copper cannot be obtained and that the copper polishing rate can be adjusted by changing the concentration of ammonium nitrate.

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PUM

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Abstract

This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.

Description

technical field [0001] The invention relates to a chemical mechanical polishing slurry for preparing semiconductor devices. In particular, it relates to a chemical mechanical polishing slurry suitable for forming corrugated copper-based metal interconnects comprising tantalum-based metals as barrier metal film materials. Background technique [0002] Copper is a useful electrical connection material for already relatively refined and compact semiconductor integrated circuits such as ULSI, whereby high performance and high reliability interconnections can be formed due to its low resistance and good electromigration or stress migration resistance. [0003] Since copper is not easily processed by dry etching, copper interconnections are formed by the so-called damascene method. For example, electrical connections such as interconnects may be formed as described below. [0004] First, concave surfaces such as grooves and connection holes are formed on an insulating film form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/02C09K3/14H01L21/304H01L21/321
CPCC09K3/1463C09G1/02H01L21/3212H04M1/0237
Inventor 土屋泰章泰地稔二板仓哲之樱井伸青柳健一伊藤友行
Owner RENESAS ELECTRONICS CORP
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