Semiconductor integrated circuit electronic apparatus and back grid potential control method of transistor
An integrated circuit and potential control technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., and can solve the problems of increased leakage current, increased circuit scale, and inability to reduce leakage current.
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Embodiment approach 1
[0041] figure 1 It is a block diagram of a system in which the master unit collectively controls the back gate potentials of a plurality of circuit blocks. The semiconductor integrated circuit in the VLSI chip is divided into M circuit blocks (logic blocks) 20-1, 20-2, . In order to reduce the power consumption of the entire VLSI chip, it is desirable to divide it into a plurality of circuit blocks classified by function. The main unit (control circuit) 10 is an event-driven system, which adopts the logic design level of VLSI to construct the data flow and control logic for unified and centralized control of these circuit blocks 20-1, 20-2, ..., 20-M .
[0042] figure 2 It is a state transition diagram of a finite state machine (Finite State Machine) that realizes the back gate potential control logic of the main unit 10 . The standby state of M circuit blocks 20-1, 20-2, ..., 20-M corresponds to "0", and the operating state corresponds to "1". If the finite state machine...
Embodiment approach 2
[0060] Figure 11 It is a block diagram of a system in which a plurality of circuit blocks constituting a semiconductor integrated circuit communicate with each other and control the back gate potential autonomously or heterogeneously using the CSP (Communicating Sequential Processes) method. The semiconductor integrated circuit in the VLSI chip is logically divided into N circuit blocks (logic blocks) 70-1, 70-2, . N. In order to reduce the power consumption of the entire VLSI chip, it is desirable to divide it into a plurality of circuit blocks classified by function. These circuit blocks 70-1, 70-2, . 70-2, ..., 70-N are asynchronous systems that receive power supply and operate when it is necessary to operate autonomously or heterogeneously. The main unit 60 (control circuit) is mainly a circuit block that performs direct or indirect communication with external circuits and circuit blocks 70-1, 70-2, . A component that directly controls power supply to the circuit bloc...
Embodiment approach 3
[0071] Figure 14 and Figure 15 The middle indicates a double-gate TFT (Thin Film Transistor) 100 . Figure 14 is a top view, Figure 15 It is a sectional view along its line 15-15. A back gate electrode 103 is formed on the insulating substrate 101 via an underlayer 102 . As the insulating substrate 101, for example, a glass substrate, a quartz substrate, a plastic substrate, or the like can be used. On the top of the back gate electrode 103 and the bottom layer 102, a back gate insulating film 104, an active layer 110, a gate insulating film 111, a gate electrode 112, and an interlayer insulating film 115 are laminated in sequence. The active layer 110 is made of island-shaped polysilicon or the like, and includes a channel region 105 formed between upper and lower gates, and drain regions 106 and source regions 107 formed on both sides thereof. The back gate electrode 103 and the gate electrode 112 are disposed opposite to each other with the channel region 105 sandwi...
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