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Film optical addressing electric potential sensor used for detecting Hg2+ and preparation method thereof

A potential sensor and optical addressing technology, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of complex preprocessing, long measurement cycle, and huge equipment, and achieve less sample solution, fast measurement, and convenient use Effect

Inactive Publication Date: 2004-11-17
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current detection methods mainly include atomic absorption spectrophotometry and mass spectrometry, etc., but the equipment used in these methods is huge and expensive, requires complex pretreatment, long measurement period and skilled operators, which brings great problems in practical applications. many inconveniences

Method used

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  • Film optical addressing electric potential sensor used for detecting Hg2+ and preparation method thereof
  • Film optical addressing electric potential sensor used for detecting Hg2+ and preparation method thereof
  • Film optical addressing electric potential sensor used for detecting Hg2+ and preparation method thereof

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Embodiment Construction

[0023] Structure of the sensor

[0024] Use p-type or n-type Si sheets as the substrate, and there are SiO on the substrate from bottom to top. 2 layer, metal layer, for Hg 2+ sensitive film. Said metal layer is that the lower layer is Cr, and the upper layer is Au, such as figure 1 shown; or the lower layer is Ti, the middle layer is Pt, and the upper layer is Au, such as figure 2 Shown; Or the lower layer is Ti, the upper layer is Pt, such as image 3 shown.

[0025] Preparation of sensors

[0026] (1) Preparation of LAPS

[0027] A p-type or n-type monocrystalline silicon wafer is selected as the substrate of LAPS. After the silicon wafer is polished and cleaned, it is placed in a high-temperature furnace for thermal oxidation, so that a layer of SiO with a thickness of about 30nm is grown on the front of the silicon wafer in dry oxygen. 2 Remove the oxide layer on the back of the silicon wafer by ion etching, and then use silver paste to make a ring-shaped ohmic ...

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PUM

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Abstract

The invention discloses film light addressing potential sensor for measuring Hg2+ and the manufacturing method. The sensor is based on the light addressing potential sensor (LAPS), a layer of sensitive film is produced on its surface with laser pulse depositing technology. The invention synthesizes the sensitive material at first, which is used as the target of pulse laser deposition. Then it produces a fixed metal layer through magnetism control sputtering technology on LAPS, and then carries on the process of film with laser pulse depositing technology and device. The film sensor is sensitive to the Hg2+ in the liquid; it can detect the content of Hg2+.

Description

Technical field [0001] The invention relates to a method for detecting Hg 2+ Thin film photoaddressable potentiometric sensor and its preparation method. Background technique [0002] Heavy metal ions (such as Zn 2+ , Pb 2+ 、Cd 2+ 、Cu 2+ 、Cr 6+ , Mn 5+ 、As 3+ , Fe 3+ , Hg 2+ ) can have harmful or even fatal effects on the human body, so the quantitative detection of heavy metals is of great significance in medicine, food, clinical and environmental monitoring. The current detection methods mainly include atomic absorption spectrophotometry and mass spectrometry, etc., but the equipment used in these methods is huge and expensive, requires complex pretreatment, long measurement period and skilled operators, which brings great problems in practical applications. Many inconveniences. Contents of the invention [0003] The object of the present invention is to provide a method for detecting Hg 2+ Thin film photoaddressable potential sensor and preparation method th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/333
Inventor 王平门洪李毅许祝安
Owner ZHEJIANG UNIV
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