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Piezoelectric single crystal device and fabrication method thereof

A technology of piezoelectric single crystal and piezoelectric element, applied in the field of piezoelectric single crystal element and its manufacturing, can solve the problems of no reproducibility, no record, etc.

Inactive Publication Date: 2005-02-02
KAWATETABU MINING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, as mentioned above, none of these documents describe at all that the electromechanical coupling coefficient k31 of the direction 1 (transverse vibration mode) perpendicular to the polarization direction 3 has a relationship with the domain structure or about k 31 More than 80% reproducibility, therefore, like other known documents, they can be considered as experimental data obtained by chance without reproducibility

Method used

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  • Piezoelectric single crystal device and fabrication method thereof
  • Piezoelectric single crystal device and fabrication method thereof
  • Piezoelectric single crystal device and fabrication method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0099] A piezoelectric single crystal element (Curie temperature Tc = 175°C, element shape: 13 mm long × mm width × 0.36mm thickness) is shown in 6A.

[0100] In addition, the manufacture of the piezoelectric single crystal element complied with the aforementioned manufacturing method. After preparing the composition of 0.91 zinc lead niobate (PZN) + 0.09 lead titanate phase (PT) (expressed as x=0.91 in molar ratio), according to The aforementioned solution Bridgman method to obtain a single crystal ingot. Next, determine the correct crystallographic orientation of the single crystal ingot, perform grinding, and cut the single crystal ingot with a wire saw perpendicular to the {100} plane of the grinding surface to obtain a sheet with a thickness of 0.5 mm. This sheet was ground by a polishing machine to obtain a wafer with a thickness of 0.36 mm. A single-crystal element material having an element shape of 13 mm long x 4 mm wide x 0.36 mm thick was cut out from the wafer wi...

Embodiment 2

[0109] In order to further study in detail the relationship between the orientation 1 of the end face (more strictly speaking, the normal direction of the end face) and the domain structure of the element using the transverse vibration mode, the present inventors, as Figure 9A As shown, with respect to the direction n perpendicular to the domain structure (extending direction of the grain line on the surface), the normal direction of the end face 11c of the element using the transverse mode is changed from 0° ( Figure 9A [100] direction shown) every 5° to 90° ( Figure 9A shown in the [010] direction), made of various single crystal element materials 11, 13, etc. cut out by a dicing machine, and polarized by applying a DC electric field of 700V / mm for 60 minutes in the atmosphere at 25°C method, along with Figure 9A Polarization is carried out in the direction perpendicular to the paper surface, and after the piezoelectric single crystal elements 11`, 13` are fabricated, t...

Embodiment 3

[0116] Next, Example 3 will describe a preferred polarization treatment method for manufacturing a piezoelectric single crystal element that preferably utilizes a transverse vibration mode. Electromechanical Coupling Coefficient k for Transverse Vibration Modes of Piezoelectric Single Crystal Elements 10', 11' Manufactured under Various Polarization Conditions 31 The results of the measurements are shown in Table 3. In addition, the manufacturing method, element dimensions and test conditions of the piezoelectric single crystal element are the same as those of the first embodiment. In addition, the composition using the piezoelectric single crystal element used the element of the same composition as Example 2. The measurement results are shown in Table 3.

[0117] The polarization treatment temperature of the crystal 11 preferably utilizing the transverse mode manufactured by the same method as in Example 1 is 25°C, the applied electric field is 320V / mm lower than the lower ...

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Abstract

A piezoelectric single crystal device for actively employing the electromechanical coupling factor k 31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

Description

technical field [0001] The present invention relates to a piezoelectric single crystal element and its manufacturing method. Specifically, it relates to an element composed of a piezoelectric single crystal material, that is, focusing on the direction perpendicular to the polarization direction (polarization direction), that is, the electromechanical coupling factor (electromechanical coupling factor) k of the lateral vibration mode (lateral vibration mode) 31 A piezoelectric single crystal element with a domain structure in this direction and a method for manufacturing the piezoelectric single crystal element. [0002] That is, the present invention relates to the electromechanical coupling coefficient k focusing on the direction (transverse vibration mode) perpendicular to the polarization direction 31 A piezoelectric bulk single crystal element with reasonable control of the domain structure (extension direction of the grain lines on the element surface) and a method for m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H10N30/80C30B33/00H10N30/045H10N30/095H10N30/85
CPCH01L41/257H01L41/1875H04R17/00H03H9/176H01L41/41C30B29/30H03H9/02031C30B29/32C30B33/06C30B33/04H10N30/045H10N30/095F16K1/54F16K27/02F16K37/0016
Inventor 松下三芳岩崎洋介
Owner KAWATETABU MINING