Semiconductor device and process for preparing a low-temperature polycrystalline silicon layer

Abstract

This invention provides a semi-conductor device and a method to process low temperature polycrystalline silicon film, which comprises the following steps: to form multiple semi-conductor heat dissipation structure on a base plate; to form a buffer film and a non-crystal silicon film on the base plate and the semi-conductor dissipation structure; then to make a laser crystallization process to make the non-crystal silicon film into polycrystalline film.

Description

technical field [0001] The present invention generally relates to a semiconductor device and a method for manufacturing a low-temperature polysilicon layer (lowtemperature poly-silicon, LTPS), in particular to a semiconductor device utilizing lateral growth and a method for manufacturing a low-temperature polysilicon layer method. Background technique [0002] In the manufacturing process of thin-film transistor liquid crystal displays, since the heat resistance of the glass substrate can only reach 600°C, and the deposition temperature of the polysilicon layer is about 650-575°C, if the polysilicon layer is directly fabricated at high temperature, it will cause The distortion of the glass substrate, so the current polysilicon thin film transistor liquid crystal display has gradually adopted the method of recrystallization of the amorphous silicon layer to make the low temperature polysilicon layer. [0003] The conventional low-temperature polysilicon layer is fabricated o...

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Problems solved by technology

However, in order to improve the heat conduction rate, insulating materials such as aluminum nitride, boron nitride or diamond-like carbon must be formed at high temperature, and it is not easy to etch when defining its pattern, so there are still problems in practical applications. difficulty

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