Resist pattern forming method

Abstract

The invention discloses a method for forming a resist pattern using a double-layer resist process, which only needs a simple development step equivalent to that of a single-layer resist process. The method for forming a resist pattern includes the following steps: forming a lower resist film on a substrate; forming a diffusion prevention film on the lower resist film; forming an upper resist film on the diffusion prevention film; exposing the etching film and the upper resist film; and simultaneously developing the lower resist film and the upper resist film. Si, which is an etching resistance improving component, is contained only in the upper layer resist film and is not contained in the lower layer resist film. The diffusion prevention film prevents Si from diffusing from the upper layer resist film to the lower layer resist film and transmits light at the time of exposure, while having the property of being eliminated by a developer at the time of development.

Description

technical field [0001] The present invention relates to a resist pattern used for microprocessing in semiconductor manufacturing technology and the like, and more particularly to a method for forming a resist pattern. Background technique [0002] figure 1 is a schematic cross-sectional view describing the first conventional example of a resist pattern forming method, and steps from figure 1 [1] Proceed to figure 1 [3]. Description will be given below with reference to the accompanying drawings. [0003] The first traditional example is the single-layer resist process as the most common process. First, if figure 1 As shown in [1], sequential positive photoresists are coated on the substrate 50 having an oxide film to form a resist film having a film thickness of about 1 μm. Then, if figure 1 As shown in [2], a photomask 62 in which a light-shielding film 61 of a prescribed pattern is formed on a transparent substrate 60 is prepared. KrF laser light 63 is irradiated o...

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Problems solved by technology

[0014] However, the conventional two-layer resist process has disadvantages in that the number of steps and the number of devices used are increased because the process requires a dry development process on the lower resist film 71, which differs from that of the upper resist film with an alkaline developer. The development process of 72 together totals two development process steps

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