Process for preparing TiNiPd shape memory alloy free film
A memory alloy, thin film technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of weakening the effectiveness of thin film devices, reducing the performance of thin film samples, etc., to achieve damage and boundary effect reduction, original The effect of improved material quality and reduced handling damage
Inactive Publication Date: 2005-07-06
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0011] Provide following embodiment in conjunction with content of the present invention:
[0012] Three types of glass-based TiNiPd alloy thin films with a thickness of 6 μm were obtained by alloy target magnetron sputtering. The atomic percentages of the components of each thin film are shown in Table 1. The TiNiPd alloy thin films of the three examples were respectively pasted with transparent adhesive tapes, fixed on the flat plate together with the glass slides, and adjusted to automatically cut with a precision grinding wheel cutting machine at a pitch of 1.5mm to obtain thin thin films of 1.5mm×25mm×6μm. Immerse in a mixed solution of chloroform with a small amount of isoamyl acetate, take it out after a period of time to separate the scotch tape and film and remove the thick mucus, then immerse in the isoamyl acetate solution for a long time, take it out, and rinse it in acetone for 3 times Then dry it for later use. See Table 1 for solution ratios and immersion times...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| breaking strength | aaaaa | aaaaa |
| fracture strain | aaaaa | aaaaa |
| fracture strain | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a preparation method fro TiNiPd shape memory alloy free film, belonging to material preparation technique field. The invention comprise: sticking the film surface of the glassslide on to the scotch tape, cutting the tape, film and glassslide by precise grinding wheel, soaking the tape with film in the mixed solution of iso-amyl acetate and chloroform, separating the film and scotch tape by a forceps, removing thick mucus attached to the film surface, soaking the film into the iso-amyl acetate solution for dissolving the residual mucus on the film surface, finally putting the film into the acetone solution, washing it and the TiNiPd shape memory alloy is abtained. In this invention, since the protection of scotch tape, operation causing the damage of film is decreased, and obtaining ratio of film is increased; the damage of the film in detaching and processing and boundary effect are reduced greatly, and free film tape material quality is improved greatly; and the free film with thickness under 5 micrometers can be prepared by the method.
Description
technical field [0001] The invention relates to a thin film preparation method, in particular to a TiNiPd shape memory alloy free thin film preparation method, which is used in the technical field of material preparation. Background technique [0002] Nickel-titanium-palladium series shape-memory alloy thin films are the preferred materials for high-temperature micro-drives at 100°C to 200°C. TiNiPd thin films can be deposited on substrates such as glass and silicon wafers by magnetron sputtering of alloy targets. However, the film needs to be peeled off from the substrate and processed to obtain thin strips or other shape-free films that can be used for tensile performance tests, shape memory bending tests, and micro-actuation device fabrication. [0003] After searching the prior art documents, it was found that T. Sawaguchi et al. wrote the article "Microstructure and shape memory behavior of Ti 51.2 (Pd 27.0 Ni 21.8 ) and Ti 49.5 (Pd 28.5 Ni 22.0 )thin films" ("Mat...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/18
Inventor 钱士强吴建生
Owner SHANGHAI JIAO TONG UNIV