Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same
一种交联聚合物、组合物的技术，应用在微光刻曝光设备、图纹面的照相制版工艺、用于光机械设备的光敏材料等方向，能够解决低蚀刻速率及速度、底部薄膜层损害、影响最终产物半导体器件可靠性等问题
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Embodiment 1
[0059] Preparation of cross-linked polymer for organic anti-reflection coating of the present invention
[0060] 100 g of acrolein and 10 g of AIBN were poured into 500 g of a tetrahydrofuran solvent, followed by polymerization at 66°C for 8 hours. According to the polymerization, a white solid produced as the polymerization progressed was filtered, and then, after the polymerization was completed, it was dried to obtain 60 g of a polyacrylaldehyde polymer.
[0061] 60 g of this polyacrylaldehyde polymer was dissolved in 1 liter of ethyl lactate. 0.5 g of 2-hydroxyhexyl p-toluenesulfonate was added to this solution, and then reacted by reflux at 90°C. It was observed that as the reaction progressed, the white solid dissolved in ethyl lactate and changed color to give a brown solution.
[0062] After completing the reflux reaction for 24 hours, the reaction solution was concentrated by a rotary distillation device, the precipitate produced in 2 L of distilled water was filter...
Embodiment 2
[0067] Preparation of the organic anti-reflection coating of the present invention
[0068] 0.5g of the cross-linked polymer with the above formula 5 obtained in Example 1, 0.5g of the polyvinylphenol polymer of the formula 1 as a light absorber, and 0.085g of the polyvinylphenol polymer with the structure of the formula 4 as a thermal acid produced The 2-hydroxyhexyl p-toluenesulfonate of the agent was dissolved together in 10 g of propylene glycol methyl ether acetate. Passing the obtained solution through a fine filter with a pore size of 0.2 μm yields the desired organic antireflective coating composition.
[0069] The resulting organic anti-reflective coating composition was spin-coated on a silicon wafer at a rate of 3000 rpm, and then baked at 240° C. for 90 seconds to generate cross-linkage bonds, thereby generating an organic anti-reflective coating.
experiment Embodiment 1
[0077] Comparison test of etching speed
[0078] The two organic antireflective coatings obtained from Example 2 and Comparative Example 1 were subjected to a comparative test of etching speed. to use by CF 4 , O 2 The etching process is carried out by dry etching of a mixture composed of Ar and Ar gas. By comparing the etching thicknesses of the two organic antireflective coatings under the same conditions and in the same period, the etching speeds of the above two coatings were tested. The results are in Table 1.
[0079] Thickness before etching (A)
[0080] As shown in Table 1, the organic antireflective coating composition of the present invention used to form an organic antireflective coating can obtain an etching rate about 1.25 times higher than that of the conventional composition.
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