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Growing method for cerium blended lutetium disilicate scintillating mono crystal

A growth method and lutetium silicate technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve problems such as polycrystalline lattice defects and inclusions, reduce crystal scintillation performance, etc., to improve yield and improve heat dissipation. The effect of uniformity and high crystal quality

Inactive Publication Date: 2005-08-03
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there are more lattice defects and inclusions in the Ce:LPS scintillation crystal grown by the prior technology, which reduces the scintillation performance of the crystal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1: preparation (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 scintillation crystal

[0034] According to the above-mentioned preparation process step , the dry Lu with a purity of 99.999% is selected 2 o 3 , SiO 2 and CeO 2 As raw material, with (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 The molar ratio of each component raw material in (Lu 2 o 3 : CeO 2 : SiO 2 =0.995∶0.01∶2) Accurately weigh 1500g in total, fully mix and grind evenly; according to process step press into a block under a pressure of 200MPa, then put the block into a muffle furnace and sinter at 1400°C 15h into (Ce 0.005 Lu 0.995 ) 2 Si 2 o 7 Polycrystalline: According to the process step , put the fired polycrystalline material into the Ir gold crucible in the furnace, put the LPS seed crystal in a certain direction into the seed crystal holder, and load it into the furnace. LPS seed crystal direction: parallel to the complete cleavage surface (110) and parallel to the angle between the incomp...

Embodiment 2

[0035] Embodiment 2: (Ce 0.005 Gd 0.2 Lu 0.795 ) 2 Si 2 o 7 scintillation crystal

[0036] According to the process step in the above-mentioned embodiment 1, the selected purity is 99.999% dry Lu 2 o 3 、Gd 2 o 3 , SiO 2 and CeO 2 As raw material, with (Ce 0.005 Gd 0.2 Lu 0.795 ) 2 Si 2 o 7 Accurately weigh the molar ratios of the raw materials in each component, totaling 1500g, and fully mix and grind evenly; repeat the process step in the above example 1, and select the LPS seed crystal according to the process step in the above example 1 Direction: respectively parallel to the complete cleavage plane (110), and the included angle with the incomplete cleavage plane (001)=20°; according to the process step in the above-mentioned embodiment 1, the temperature is raised to 2000°C at a heating rate of 500°C / hr ℃ chemical material, and then keep the temperature in this temperature range for 3 hours; so that the melt in the crucible is completely homogenized. ...

Embodiment 3

[0037] Embodiment 3: (Ce 0.005 Y 0.15 Lu 0.845 ) 2 Si 2 o 7 scintillation crystal

[0038] According to the process step in the above-mentioned embodiment 2, the selected purity is 99.999% dry Lu 2 o 3 , Y 2 o 3 , SiO 2 and CeO 2 As raw material, with (Ce 0.005 Y 0.15 Lu 0.845 ) 2 Si 2 o 7 Accurately weigh the molar ratios of the raw materials in each component, totaling 1500g, and fully mix and grind evenly; repeat the process step in the above example 2, and select the LPS seed crystal according to the process step in the above example 2 Direction: respectively parallel to the complete cleavage plane (110), and the included angle with the incomplete cleavage plane (001)=25°; according to the process step in the above embodiment 2, the temperature is raised to 2050 °C at a heating rate of 350 °C / hr ℃ chemical material, and then keep the temperature in this temperature range for 3 hours; so that the melt in the crucible is completely homogenized. Accordin...

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Abstract

The present invention is growth method of scintillating cerium doped lutetium disilicate monocrystal. The monocrystal has structure expression of (CexReyLu1-x-y)2Si2O7, where Re is one or several of Sc, Er, La, Ho, Dy, Yb, Y, Gd, etc.; x is 0.001-0.05 and y is 0-0.2. The growth method features that in the LPS crystal seed direction parallel to the complete cleavage plane (110) and in angle not greater than 25 deg with the incomplete cleavage plane (001), the crystal is grown in relatively low pulling speed of 0.5-1.5 mm / hr, and special tailing program is adopted to make the crystal tail basically in the symmetrical shape with the shoulder. The present invention can solve the problem of cleavage bursting of the (CexReyLu1-x-y)2Si2O7 crystal, and has high crystal quality and relatively large crystal size.

Description

technical field [0001] The invention relates to crystal growth, in particular to a method for growing cerium-doped lutetium disilicate scintillation single crystal. Background technique [0002] Inorganic scintillation crystals can be widely used in high-energy physics nuclear physics detection, imaging nuclear medicine (PET, CT), industrial online detection, safety inspection, geological archaeology, oil well survey and astronomical observation and other research applications. In recent years, with the continuous expansion of the application fields of inorganic scintillation crystals, different application fields have put forward more and higher requirements for scintillation crystals. Therefore, searching for scintillation crystals with high light output and fast decay has become a research hotspot. [0003] BGO scintillation crystal is a traditional inorganic scintillation crystal, and its biggest advantage is that it has a large density and effective atomic number (ρ=7....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/02C30B29/34
Inventor 严成锋赵广军徐军介眀印庞辉勇张连翰夏长泰杭寅
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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