Semiconductor device and method for manufacturing the same
A semiconductor and device technology, applied in the field of integrated drive circuits and devices formed of crystalline silicon, can solve the problems of high cost, poor uniformity, and low yield.
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Embodiment 1
[0070] In this embodiment, a method of crystallizing an amorphous silicon film using each island-shaped nickel film formed on a Coning 7059 glass substrate as a starting point and manufacturing a TFT using the obtained crystalline silicon film will be described. There are two methods of forming the island-shaped nickel film depending on whether the island-shaped nickel film is formed on or under the amorphous silicon film. FIG. 2(A-1) shows a method of forming a nickel film under a silicon film, and FIG. 2(A-2) shows a method of forming a nickel film on a silicon film. Special care must be taken with the latter method, because in the process, nickel is selectively etched on the entire surface of the amorphous silicon film. After nickel is formed, nickel and amorphous silicon react with each other, although the amount is small, and nickel silicide will be produced. . Since a good crystalline silicon film cannot be obtained if nickel silicide is left as it is, it is an object o...
Embodiment 2
[0090] FIG. 5 shows a case of fabricating an aluminum gate TFT, which is similar to that shown in FIG. 4 . However, in this embodiment, amorphous silicon is used as the active layer. As shown in FIG. 5(A), an amorphous silicon film 33 is deposited on a substrate 31 to a thickness of 2000 to 3000 Å. An appropriate amount of P-type or N-type impurities may be mixed into the amorphous silicon film. The island-shaped nickel or nickel silicide coating films 34A and 34B are formed as described above, and in this state, annealing is performed at 550°C for 8 hours, or at 6000°C for 4 hours to crystallize the lateral growth of the amorphous silicon film.
[0091] Then, the thus obtained crystalline silicon film is formed into a pattern as shown in FIG. 5(B). Nickel is present, and when patterning is performed, this portion is removed to form island-like silicon regions 35A and 35B. Then, a substantially intrinsic amorphous silicon film 36 is deposited thereon.
[0092] Thereafter, ...
Embodiment 3
[0094] FIG. 6 shows a process for fabricating a CMOS type TFT. As shown in FIG. 6(A), an underlying silicon oxide film 52 is deposited on a substrate 51, and an amorphous silicon film 53 with a thickness of 1000-1500 Å is deposited thereon. Then, as described above, the island-shaped nickel or nickel silicide coating film 54 is formed, and annealing is performed at 550° C. in this state. The nickel silicide region 55 is shifted in the plane direction of the coating film, not in the thickness direction, and crystallization is promoted by this process. Annealing was performed for 4 hours to change the amorphous silicon film into crystalline silicon as shown in FIG. 6(B). The nickel silicide regions 59A and 59B are pushed to the edges as crystallization progresses.
[0095] The crystalline silicon film thus obtained is patterned to form island-shaped silicon regions 56 as shown in FIG. 6(B). Special care should be taken here, nickel is highly concentrated at both ends of the i...
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Abstract
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