Semiconductor device, circuit and display device using said device and its driving method

Abstract

A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.

Description

technical field

[0001] The present invention relates to a semiconductor device, a circuit and a display device using the semiconductor device, and a driving method of the semiconductor device, more particularly, to a MOS (metal oxide semiconductor) transistors such as polysilicon TFTs (thin film transistors), circuits and display devices using the semiconductor devices, and driving methods of the semiconductor devices. Background technique

[0002] Polysilicon TFTs formed on insulating substrates once required expensive quartz substrates for high-temperature processing, and have been applied to small-sized, high-value-added display panels. Afterwards, a technique was developed in which a precursor film was formed by methods such as low-pressure (LP) CVD, plasma (P) CVD, or sputtering, and then laser annealed to polycrystallize it, which is capable of allowing the use of A technology that forms polysilicon TFTs at relatively low temperatures on glass substrates, etc. At the...

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