System for CD glow plasma CVD zin oxide film and preparing process

A technology of chemical vapor deposition and zinc oxide thin film, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of unstable quality and difficulty in reproducing the film, and achieve high growth rate and stable quality Effect

Inactive Publication Date: 2006-03-29
NANCHANG HANGKONG UNIVERSITY
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Problems solved by technology

At present, the plasma-enhanced metal-organic chemical vapor deposition equipment at home and abroad mostly fills the reaction chamber with plasma, and most of the substrates are arranged near the anode; during the film growth process, the electron beam has been bombarding the newly deposited film, so it is difficult to grow the film. Reproduce, unstable quality

Method used

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  • System for CD glow plasma CVD zin oxide film and preparing process
  • System for CD glow plasma CVD zin oxide film and preparing process

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the embodiments and with reference to the accompanying drawings.

[0018]The present invention comprises vacuum reaction hood 16, upper air intake pipe 15, lower air intake pipe 14, quartz reaction chamber 35, insulating seat 36 and particle filter 17, air pump 18, combustion bottle 19 and exhaust port 20 installed under vacuum reaction hood 16 , carbon dioxide passes through gas flowmeter 1, electromagnetic valve 2, hydrogen gas meets carbon dioxide after passing through gas flowmeter 3, electromagnetic valve 4, enters the lower intake pipe 14, and the steel cylinder 9 with diethylzinc or dimethylzinc is placed in the In the temperature control box 10 with water, nitrogen gas with a small flow rate flows through the steel cylinder 9 through the gas flow meter 7 and the manual valve 8, and bubbles are blown up, and diethyl zinc or dimethyl zinc vapor is taken out through the manual valve ...

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Abstract

A system and process for preparing zinc oxide film by DC glow plasma CVD is disclosed. Said system is composed of vaccuum reaction chamber, upper and lower gas inlet tubes, insulating base, cooling chamber, upper and lower gas cavities, and upper and lower gas outlet tubes. Its process includes such steps as vacuumizing reaction chamber, heating substrate on the Ta sheet, filling the gas of diethyl (or dimethyl) zinc via upper gas inlet tube, filling CO2 and H2 via lower gas inlet tube, reacting and thermocracking of diethyl (or dimethyl) zinc to deposit zinc oxide film.

Description

technical field [0001] The invention relates to the preparation of semiconductor thin film materials, in particular to a system and a preparation process for direct current glow plasma chemical vapor deposition of zinc oxide thin films. Background technique [0002] Zinc oxide (ZnO) is a new II-VI wide bandgap semiconductor material, which has a very broad application prospect in many fields. It has a hexagonal wurtzite crystal structure and is a direct wide bandgap semiconductor with a bandgap width of 3.30eV at room temperature and a high exciton binding energy of 60meV. In theory, ZnO has the ability to emit blue light or ultraviolet light, coupled with its high exciton binding energy, it has a significant low-threshold excitation mechanism in an environment higher than room temperature. Under the guidance of this theory, the ZnO thin film Preparation and attention to its luminescent properties. In the process of research, it is also found that ZnO thin films with good ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513
Inventor 王应民张萌蔡莉李禾程国安徐飞
Owner NANCHANG HANGKONG UNIVERSITY
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