Nano marking press
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Publication Date
- 2006-05-24
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a manufacturing device for nanoscale structures and devices, in particular to a manufacturing device for multilayer nanoscale structures and devices. Background technique
[0002] Optical lithography technology is difficult to produce patterns with line widths less than 100nm due to the limitation of light wavelength and numerical aperture, as well as the influence of scattering and interference. Although a series of difficult improvements, such as extreme ultraviolet lithography, X-ray lithography, electron beam projection, ion beam projection, micro-electron beam array, etc., can also overcome the diffraction limit caused by linewidths less than 100nm, the system Complicated and very expensive. In order to further promote the development of the semiconductor industry and nanotechnology, it is imperative to study a nanofabrication equipment that makes the process simple, low in cost and high in production efficiency. [0003...