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1.3 micron high density guantum point structure and its preparation method

A quantum dot, high-density technology for 1.3-micron edge-emitting laser structures and their molecular beam epitaxy growth

Inactive Publication Date: 2006-06-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The patent US5953356 proposes that the luminescence mechanism of 1.3 micron quantum dots is the transition between subbands, but the transition between subbands is not the main reason for the emergence of 1.3 micron wavelength

Method used

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  • 1.3 micron high density guantum point structure and its preparation method
  • 1.3 micron high density guantum point structure and its preparation method
  • 1.3 micron high density guantum point structure and its preparation method

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Embodiment 1

[0050] This table shows the composition of each layer, substrate temperature (growth temperature), number of cycles, etc. according to the layered structure of the quantum dot structure. Wherein the growth temperature of the first GaAs barrier layer decreases linearly from 580°C to 480°C. The InAs quantum dot layer is grown by a cyclic growth method, namely: first grow InAs with a thickness of 0.1 monoatomic layer (0.283 angstroms), then stop for 5 seconds, and then grow InAs with a thickness of 0.1 monoatomic layer (0.283 angstroms), and so on. 25 times. The total InAs thickness is 25 monatomic layers (70.75 Angstroms). The growth temperature is 480°C. The growth temperature of the second GaAs barrier layer increases linearly from 480 to 580°C.

[0051] Please refer to shown in Fig. 1 again, a kind of preparation method of 1.3 micron high-density quantum dot structure of the present invention comprises the steps:

[0052] Step 1: Select a GaAs transition layer 10, ...

Embodiment 2

[0074] This table indicates the composition of each layer, substrate temperature (growth temperature), doping concentration and type (N-type or P-type), cycle times, etc. according to the layered structure of the quantum dot laser. The growth method for growing the InAs quantum dot layer is: first grow InAs with a thickness of 0.1 monoatomic layer (0.283 angstroms), then stop for 5 seconds, and then grow InAs with a thickness of 0.1 monoatomic layer (0.283 angstroms), and cycle like this 25 times. The total InAs thickness is 25 monatomic layers (70.75 Angstroms).

[0075] The 1.3 micron high-density quantum dot structure of the embodiment described therein is included in the 1.3 micron high-density quantum dot laser structure of embodiment 2, and the 1.3 micron high-density quantum dot structure can be used as the core active layer alone in lasers, detection Devices, and any other optoelectronic devices and integrated optoelectronic devices that operate at a wavelength...

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Abstract

The present invention relates to a 1.3 micrometer high-density quantum point structure. It is characterized by that it includes a gallium arsenide transition layer, a first gallium arsenide potential barrier layer, said first gallium arsenide potential barrier layer is made on the gallium arsenide transition layer, an indium arsenide self-organized quantum point made on the first gallium arsenide potential barrier layer, an indium gallium arsenic covering layer made on the indium arsenide self-organized quantum point, a second gallium arsenide potential barrier layer made on the indium gallium arsenic covering layer and a gallium arsenide covering layer made on the second gallium arsenide potential barrier layer.

Description

technical field [0001] The present invention relates to a new type of indium arsenide (InAs) / gallium arsenide (GaAs) high-density self-organized quantum dot structure and epitaxial growth technology with a light emitting wavelength of 1.3 microns, and a 1.3 Micron edge-emitting laser structure and molecular beam epitaxy growth technology. Background technique [0002] 1.3 micron semiconductor laser is a key optical device widely used in optical fiber communication systems. The current commercial products are indium gallium arsenide phosphide (InGaAsP) / indium phosphide (InP) lasers. Due to the small difference in refractive index between InGaAsP and InP, the restrictions on the carriers in the active region are insufficient, resulting in poor temperature stability of the laser. The maximum characteristic temperature is only about 70K. At the same time, it is difficult to prepare vertical cavity surface emitting lasers with InGaAsP / InP materials. Therefore, the study of new...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/74
Inventor 牛智川方志丹倪海桥韩勤龚政张石勇佟存柱彭红玲吴东海赵欢吴荣汉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI