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Treating device using raw material gas and reactive gas

A technology of reactive gas and raw material gas, applied in electrical components, gaseous chemical plating, metal material coating process, etc.

Active Publication Date: 2011-06-08
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, not only the location is required, but also the collection device must be replaced periodically, so maintenance is complicated, costly, and production capacity is reduced

Method used

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  • Treating device using raw material gas and reactive gas
  • Treating device using raw material gas and reactive gas
  • Treating device using raw material gas and reactive gas

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0044] First, explain as Figure 1 ~ Figure 3 The first embodiment of the invention is shown. In this first embodiment, an example is given of intermittently supplying WF as a raw material gas at different supply times. 6 Gas and reducing gas SiH as a reactive gas 4 In the case of forming a tungsten film (seed film).

[0045] First, like figure 1 As shown, the processing device 20 has a cylindrical processing container 22 that can be evacuated inside. Inside the processing container 22, there is provided a mounting table 24 on which a semiconductor wafer W as a to-be-processed object is placed. The mounting table 24 is embedded with, for example, a resistance heater 26 as a heating means. , The above-mentioned wafer W can be heated to and maintained at a predetermined temperature. In addition, as a heating means, a heater lamp can be used instead of a resistance heater.

[0046] A gate valve 28 that opens and closes when the wafer W is taken out and transported is provided on th...

no. 2 approach

[0097] Below, refer to Picture 10 The existing example shown, right Image 6 with Figure 7 The illustrated second embodiment of the present invention will be described. The purpose of the second embodiment is to suppress the maintenance frequency of the trap device installed in the vacuum exhaust system. Here to use TiCl 4 Gas and NH 3 The case where the TiN film is formed by the thermal CVD method will be described as an example.

[0098] Picture 10 The structure inside the processing container 22 of the existing processing device shown is the same as figure 1 The structure is the same as in figure 1 The description of the same symbols is omitted. The spray head 30 in the processing vessel 22 is connected with a supply such as TiCl 4 The raw material gas supply system 90 uses the gas as the raw material gas. A flow controller 92A such as a mass flow controller for flow control is provided in the middle of the raw gas supply system 90, and a valve 94 is provided on the upst...

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PUM

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Abstract

A treating device for applying film-formation treatment to a body to be treated (for example, semiconductor wafer) by using raw material gas and reactive gas, comprising a treatment container (22) storing the body to be treated (W) therein, a raw material gas supply system (50) and a reactive gas supply system (52) selectively supplying the raw material gas and the reactive gas into the treatmentcontainer, and an evacuating system (36) having vacuum pumps (44) and (46) for evacuating atmosphere in the treatment container. The device further comprises a raw material gas bypassing system (62) and a reactive gas bypassing system (66) selectively flowing the raw material gas and the reactive gas from the gas supply systems to the evacuating system while bypassing the treatment container. A raw material gas outflow prevention valve (X1) and a reactive gas outflow prevention valve (Y1) for preventing, in closed states, the raw material gas and the reactive gas from flowing out to the evacuation system are installed in the bypass systems (62) and (66).

Description

technical field [0001] The present invention relates to a processing apparatus for performing film formation processing on, for example, a semiconductor wafer using a source gas and a reactive gas (reducing gas, oxidizing gas, etc.). Background technique [0002] Usually, in the process of manufacturing semiconductor integrated circuits, various monolithic processes such as film formation, etching, heat treatment, modification, and crystallization are repeatedly performed on semiconductor wafers and other processed objects to form desired integrated circuits. . When performing the above-mentioned various treatments, the necessary processing gases corresponding to the types of treatment, such as film-forming gas during film-forming treatment, ozone gas during modification treatment, etc., N 2 Inert gas such as gas or O 2 Gas, etc., are respectively introduced into the processing container. [0003] For example, taking a monolithic processing device that performs monolithi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455H01L21/285
CPCC23C16/45525C23C16/4412
Inventor 田中雅之甲斐亘三村上诚志宫下哲也
Owner TOKYO ELECTRON LTD