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Low oxygen control method in czochralski silicon monocrystal

A control method, Czochralski silicon technology, applied in single crystal growth, chemical instruments and methods, self-melt pulling method, etc.

Active Publication Date: 2006-07-26
JINGHUA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Although there are applications and researches in China, they have not been used in the middle and low oxygen range (4×10 17 a / cm 3 -7.0×10 17 a / cm 3 ), the total oxygen content of the entire single crystal is within the target range of ±0.5×10 17 a / cm 3 preparation technology

Method used

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Embodiment Construction

[0008] The process conditions used in the present invention are: the initial magnetic field strength is 300-2500GS, the end magnetic field strength is 50-1500GS, the magnetic field strength change rate is 1-10GS / min, the crucible speed change range is 0.1-10rpm, and the crystal speed change range 10-30rpm, crystal pulling speed 0.5-3mm / min, argon flow rate 2-7m 3 / hr, the pressure in the furnace is 1-4kpa.

[0009] For example, in a specific embodiment, it is required that the drawn oxygen content is 5×10 17 a / cm 3 -6.5×10 17 a / cm 3 For the φ4″ single crystal within the range, the initial magnetic field strength is 1300GS, the end magnetic field strength is 100GS, the magnetic field change rate is 4GS / min, the crucible speed is changed to 1-1.5rpm, the crystal speed is 15rpm, and the crystal pulling speed changes. 1.6-0.6mm / min, argon flow rate is 3m 3 / hr, the pressure in the furnace is 2kpa. Pull out the single crystal after testing, the head oxygen content is 5.4×10 17 a / cm 3 ,...

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Abstract

The invention discloses a hypoxia controlling method of straight pulling monocrystalline, which is characterized by the following: initial magnetic density is 300-2500GS; terminal magnetic density is 1-10GS / min; running speed of crucible is 0. 1-10rpm; running speed of crystal is 10-30rpm; pulling rate of crystal is 0. 5-3mm / min; flow rate of argon gas is 2-7m3 / hr; furnace pressure is 1- 4KPa. It is effective to make oxygen content of the whole length of single crystal (charge amount of crucible: 15kg-60kg, diameter of single crystal: ªÁ2íÕ-ªÁ6) in one of three target zones (5. 5í‡1017a / cm3-7. 0í‡1017a / cm3, 5. 0í‡1017a / cm3-6. 5í‡1017a / cm3, 4. 0í‡1017a / cm3-5. 5í‡1017 a / cm3), wherein the oxygen content deviation of the whole length of single crystal is í‚0. 5í‡1017a / cm3, <heterogeneity of radial oxygen content íœ5%, yield of single crystalí¦60%.

Description

Technical field [0001] The invention relates to a preparation method for controlling the oxygen content in the Czochralski silicon single crystal in the range of low oxygen and good longitudinal and radial oxygen content uniformity. Background technique [0002] Through special heat treatment, the CZ silicon wafer can form a clean area without defects in the near surface layer of the silicon wafer, while the inside of the silicon wafer is due to SiO 2 The precipitates form high-density defects, which can absorb metal impurities, which is IG (intrinsic gettering) intrinsic gettering. Silicon wafers with intrinsic gettering ability are called intrinsic gettering silicon wafers. In order for the silicon wafers to have intrinsic gettering ability, the silicon wafers need to have a certain oxygen content. The silicon wafers have too low oxygen content without IG effect. If the oxygen content is too high, oxygen precipitates will grow into the clean layer and the clean area will be des...

Claims

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Application Information

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IPC IPC(8): C30B15/20
Inventor 施承启马四海
Owner JINGHUA ELECTRONICS MATERIAL
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