Infrared solid-state image pickup apparatus and a production method thereof
A solid-state imaging device and infrared technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, radiation control devices, etc., can solve the problems of infrared camera device SN ratio decrease, etc., achieve good output SN ratio, reduce noise, and improve SN than the effect
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Embodiment approach 1
[0032] The infrared solid-state imaging device according to Embodiment 1 of the present invention is an uncooled (or thermal) infrared solid-state imaging device. In particular, the example shown in Embodiment Mode 1 is an infrared solid-state imaging device formed using a so-called SOI (Silicon On Insulator, silicon on insulator) substrate. The SOI substrate is a substrate in which an SOI layer (that is, a single crystal silicon layer) is formed on a silicon substrate via a silicon oxide film called a buried oxide film layer (hereinafter referred to as a BOX layer). In the usual semiconductor industry, high-frequency transistors are fabricated in this SOI layer. In Embodiment 1 of the present invention, a PN junction diode for detecting infrared rays is formed in the SOI layer. In order to effectively convert the infrared rays incident on the infrared solid-state imaging device into the temperature change of the PN junction diode part, the detection unit containing the PN ju...
Embodiment approach 2
[0059] An infrared solid-state imaging device 100 according to Embodiment 2 of the present invention will be described with reference to the drawings.
[0060] In Embodiment 1, the configuration P + N - The case where the N-type semiconductor layer has a three-layer structure among the P-type and N-type semiconductor layers of the junction diode. In Embodiment 2, in addition to the N-type semiconductor layer, the P-type semiconductor layer also has a three-layer structure. The infrared solid-state imaging device 100 of Embodiment 2 differs from Embodiment 1 only in that P + N - The diode part, the physical structure of the detector 200, the signal processing circuit 120, and the operation are the same as those of the first embodiment. P + N - junction diode section.
[0061] Figure 9 is a schematic diagram of the thermal isolation structure of the detector 200, along with Embodiment 1 figure 2 The section taken by the A-A section line is equivalent to the section. In...
Embodiment approach 3
[0070] In the PN junction diode shown in Embodiment Mode 1, the upper layer and the lower layer of the N-type semiconductor layer of the PN junction diode 300 are the insulating film 440 and the BOX layer 420, respectively, so that carriers are not present in the above layers. The semiconductor layer structure trapped by the trap level on the semiconductor / oxide film interface. Embodiment 3 is a semiconductor layer structure in which carriers are not captured by trap levels on the entire semiconductor / oxide film interface surrounding the N-type semiconductor layer. That is, in addition to Embodiment 1, a structure is further configured in which the interface between the N-type semiconductor layer and the surrounding isolation oxide film 430 also reduces the trapping of carriers at the semiconductor / oxide film interface. The infrared solid-state imaging device 100 of Embodiment 3 differs from Embodiment 1 only in that P + N - The portion where the N-type semiconductor layer i...
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