Semiconductor encapsulating epoxy resin composition and semiconductor device

Abstract

The present invention provides an epoxy resin composition, which is characterized in that it contains: (A) a naphthalene type epoxy resin represented by the following general formula (1), (m, n represent 0 or 1, R represents a hydrogen atom , an alkyl or phenyl group with 1 to 4 carbon atoms, G represents an organic group containing a glycidyl group, but in 100 parts by mass of the above general formula (1), the compound containing m=0 and n=0 is 35~ 85 mass parts, m=1, n=1 compound is 1 to 35 mass parts); (B) a phenolic resin curing agent having at least one substituted or unsubstituted naphthalene ring in one molecule; (C) inorganic matter filling agent and (D) at least one compound selected from rare earth oxides or hydrotalcite compounds. The epoxy resin composition of the present invention has good fluidity, small coefficient of linear expansion, high glass transition temperature, low hygroscopicity, and excellent lead-free solder crack resistance.

Description

technical field [0001] The present invention relates to an epoxy resin for encapsulating semiconductors having good fluidity, low coefficient of linear expansion, high glass transition temperature, low hygroscopicity, crackability of lead-free solder, heat-resistant reliability, and moisture-resistant reliability A composition and a semiconductor device sealed with a cured product of the resin composition. Background technique [0002] Previously, semiconductor devices were dominated by resin-sealed diodes, transistors, ICs, LSIs, and super-LSIs. Compared with other thermosetting resins, epoxy resins have lower etc. are excellent, so epoxy resin compositions are generally used to seal semiconductor devices. However, in recent years, along with the miniaturization, weight reduction, and high-performance market development of electronic equipment, the high integration of semiconductor elements has progressed further. In promoting the mounting technology of semiconductor devic...

AI Technical Summary

Problems solved by technology

Previously, as one of the methods to improve warpage, the method of increasing the cross-linking density of the resin and raising the glass transition temperature can be mentioned, but due to the increase in solder temperature caused by lead-free, the elastic modulus at high temperatures is high, and moisture absorption The resistance is also improved, so after solder reflow (reflow), peeling occurs at the interface between the cured epoxy resin and the substrate, and the problem of peeling occurs at the interface between the semiconductor element and the semiconductor resin paste.

On the other hand, by using a resin with a low cross-linking density and filling the inorganic filler at a high density, the low water absorption, low expansion rate, and low elastic modulus at high temperature can be improved, and the re-leveling resistance can be effectively expected. Viscosity becomes high, fluidity during molding is impaired

In addition, reliability at high temperatures creates problems due to the low glass transition temperature

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