35results about How to "Excellent moisture resistance reliability" patented technology

The present invention provides an epoxy resin composition, which is characterized in that it contains: (A) a naphthalene type epoxy resin represented by the following general formula (1), (m, n represent 0 or 1, R represents a hydrogen atom , an alkyl or phenyl group with 1 to 4 carbon atoms, G represents an organic group containing a glycidyl group, but in 100 parts by mass of the above general formula (1), the compound containing m=0 and n=0 is 35~ 85 mass parts, m=1, n=1 compound is 1 to 35 mass parts); (B) a phenolic resin curing agent having at least one substituted or unsubstituted naphthalene ring in one molecule; (C) inorganic matter filling agent and (D) at least one compound selected from rare earth oxides or hydrotalcite compounds. The epoxy resin composition of the present invention has good fluidity, small coefficient of linear expansion, high glass transition temperature, low hygroscopicity, and excellent lead-free solder crack resistance.

An optical resin composition that is transparent, has suitable adhesion and necessary impact absorption for protection of an image display device etc., not affecting constituent materials of a image display panel, and being excellent in reliability, can be used to provide an optical resin material using the same. The optical resin composition contains (A) a first acrylate derivative that is a compound having one polymerizable unsaturated bond in its molecule, (B) a second acrylate derivative that is a compound having two or more polymerizable unsaturated bonds in its molecule, and (C) an acrylate derivative polymer, and an optical resin material produced by curing reaction of the optical resin composition.

A process for semiconductor device production which comprises: a preparation step in which a substrate for element mounting (108) equipped with a plurality of package areas (114) separated by dicing regions (112) is prepared; a mounting step in which semiconductor chips (116) are mounted respectively on the package areas (114) of the substrate for element mounting (108); a molding step in which the semiconductor chips (116) are simultaneously encapsulated by molding with an encapsulating epoxy resin composition; and a chip formation step in which the resultant structure is diced along the dicing regions (112) to separate the individual encapsulated semiconductor chips (116). The encapsulating epoxy resin composition comprises (A) an epoxy resin, (B) a hardener, (C) a silicone resin, (D) an inorganic filler, and (E) a hardening accelerator, wherein the silicone resin (C) is a branched silicone resin that is a methylphenyl-type thermoplastic silicone resin and has repeating structural units represented by general formulae (a), (b), (c), and (d). (In the formulae, symbol * indicates a bond with the Si atom contained in a repeating structural unit of another or the same kind; and R1a, R1b, R1c, and R1d are each a methyl or phenyl group and may be the same as or different from one another. The content of Si-bonded phenyl groups is 50 mass% or higher of the molecule, and the content of Si-bonded OH groups is less than 0.5 mass% of the molecule.) The formulae is shown in the specification.

An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a phenolic resin curing agent, (C) a copolymer obtained through addition reaction of alkenyl groups on an alkenyl-containing epoxy compound and SiH groups on an organohydrogenpolysiloxane of 20 to 50 silicon atoms, and (D) an inorganic filler is best suited for semiconductor encapsulation because the cured composition has good thermal cycling, anti-warping, reflow resistance, and moisture-proof reliability.

The invention provides an optical resin composition being transparent, having suitable adhesion and necessary impact absorption for protection of an image display device etc., not affecting constituent materials of a image display panel, and being excellent in reliability, and an optical resin material using the same.Disclosed is an optical resin composition containing (A) a first acrylate derivative that is a compound having one polymerizable unsaturated bond in its molecule, (B) a second acrylate derivative that is a compound having two or more polymerizable unsaturated bonds in its molecule, and (C) an acrylate derivative polymer, and an optical resin material produced by curing reaction of the optical resin composition.

This invention provides a latent catalyst having a structure of phosphonium borate consisting of a monovalent cation portion in which four specific groups are bonded to the phosphorus atom and a monovalent anion portion in which four specific groups are bonded to the boron atom, and a latent catalyst having a structure wherein the above phosphonium borate is the recurring unit and at least two of said recurring unit are connected through at least one of the four specific groups bonded to the boron atom. This invention also provides a thermo-setting resin composition comprising such a latent catalyst and an epoxy resin molding material comprising such a latent catalyst and further provides a semiconductor device in which a semiconductor is encapsulated with said epoxy resin molding material.

Provide is a dicing die-bonding film that prevents the occurrence of reflow cracking and that is capable of manufacturing a semiconductor device having excellent reliability with good productivity. The dicing die-bonding film of the present invention comprises at least: a dicing film in which a pressure-sensitive adhesive layer is provided on a support base material; and a die-bonding film that is provided on the pressure-sensitive adhesive layer, wherein the dicing die-bonding film has a water absorption rate of 1.5% by weight or less calculated from the following formula (1). [Numerical Formula 1] [(M2-M1) / M1]*100=Water absorption rate(% by weight) (1) (wherein, M1 represents the initial weight of the dicing die-bonding film, and M2 represents the weight after the dicing die-bonding film is left under an atmosphere of 85 DEG C and 85% RH for 120 hours to absorb moisture.)

PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor excellent in fillability and void resistance, for example, in a flip chip package and capable of suppressing generation of warpage.

PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor excellent in fillability and void resistance, for example, in a flip chip package and capable of suppressing generation of warpage.

A capacitor component includes a humidity resistant layer formed on a portion of the external surface of a body on which an external electrode is not formed, and further includes a humidity resistant layer disposed inside the external electrode, to improve humidity resistance reliability. The capacitor component includes an opening portion formed by removing a portion of the humidity resistant layer disposed inside the external electrode to improve electrical connection.

A film capacitor that includes a capacitor element including one or more wound or laminated metallized films, each metallized film including a resin film and a metal layer on a surface of the resin film; an outer case that houses the capacitor element; and a filling resin that fills a space between the capacitor element and the outer case, wherein the outer case is made of a resin composition containing a liquid crystal polymer and an inorganic filler.

The present invention provides a solder resist material, which can suppress the warpage of a semiconductor package upon exposure to heat or impact even when used in a thin wiring board and meets a demand for size reduction in electronic devices and a higher level of integration, and a wiring board comprising the solder resist material and a semiconductor package. The solder resist material of the present invention can effectively suppress the warpage of a semiconductor package through a fiber base material-containing layer interposed between resin layers. The fiber base material-containing layer is preferably unevenly distributed in the thickness direction of the solder resist material.

A first sealing composition includes an epoxy resin, a curing agent, an inorganic filler, and an unbaked hydrotalcite compound having a mole ratio of Mg ion to Al ion (Mg / Al) of 2.4 or more. A second sealing composition includes an epoxy resin, a curing agent, a hydrotalcite compound represented by Formula (1): Mg1-xAlx(OH)2(CO3)x / 2.mH2O, in which each of x and m independently represents a positive number, and a magnesium-containing compound that is different from the hydrotalcite compound. A third sealing composition includes an epoxy resin, a curing agent, a hydrotalcite compound represented by Formula (I), and a magnesium oxide, and a content of the magnesium oxide is from 1 part by mass to 50 parts by mass parts with respect to 100 mass parts of the epoxy resin.

Provided are a tetraphenylethane derivative represented by general formula (1), a method for producing the same, the use of the tetraphenylethane derivative as a radical generator, a liquid crystal sealing agent containing the tetraphenylethane derivative, and a thermosetting liquid crystal sealing agent for the one-drop fill process in particular. The radical generator does not foam and has excellent thermal radical generating performance, and, when used with a liquid crystal sealing agent, the resulting liquid crystal sealing agent does not contaminate liquid crystals, has a long pot life, and performs well in terms of forming a seal and forming a cell gap. (1) Y1 and Y2 in general formula (1) are each independently a hydrogen atom, phenyl, or silicon atom, R1 through R6 are each independently a hydrogen atom or C1-4 linear or branched alkyl group, and X1 through X4 are each independently a hydrogen atom, methyl group, ethyl group, methoxy group, ethoxy group, phenoxy group, or halogen group. R1 through R3 or R4 through R6 that bond with Y1 or Y2, respectively, are not present when Y1 or Y2 is a hydrogen atom, and Y1 and Y2 are not both hydrogen atoms.

This organic EL device (100) has a substrate (1), a drive circuit layer (2), a first inorganic protective layer (2Pa), an organic planarizing layer (2Pb), an organic EL element layer (3), a second inorganic protective layer (2Pa2), and a TFE structure (10). The TFE structure has a first inorganic barrier layer (12), an organic barrier layer (14), and a second inorganic barrier layer (16). When viewed from a normal line of the substrate, the organic planarizing layer is formed within a region where the first inorganic protective layer is formed, while an organic EL element is disposed within aregion where the organic planarizing layer is formed. The TFE structure has an exterior edge which intersects with a lead-out line (32) and which is situated between an exterior edge of the organic planarizing layer and an exterior edge of the first inorganic protective layer. In a portion where the first inorganic protective layer and the first inorganic barrier layer are in direct contact with each other on the lead-out line, the first inorganic barrier layer has, in a cross-section parallel to the line width direction of the lead-out line, a lateral face that is configured to have a taper angle theta (12) of less than 90 DEG. The organic planarizing layer has a surface which exceeds 50 nm in arithmetic average roughness Ra, while the second inorganic protective layer has a surface thatis not more than 50 nm in arithmetic average roughness Ra.

Provided are a tetraphenylethane derivative represented by general formula (1), a method for producing the same, the use of the tetraphenylethane derivative as a radical generator, a liquid crystal sealing agent containing the tetraphenylethane derivative, and a thermosetting liquid crystal sealing agent for the one-drop fill process in particular. The radical generator does not foam and has excellent thermal radical generating performance, and, when used with a liquid crystal sealing agent, the resulting liquid crystal sealing agent does not contaminate liquid crystals, has a long pot life, and performs well in terms of forming a seal and forming a cell gap. (1) Y1 and Y2 in general formula (1) are each independently a hydrogen atom, phenyl, or silicon atom, R1 through R6 are each independently a hydrogen atom or C1-4 linear or branched alkyl group, and X1 through X4 are each independently a hydrogen atom, methyl group, ethyl group, methoxy group, ethoxy group, phenoxy group, or halogen group. R1 through R3 or R4 through R6 that bond with Y1 or Y2, respectively, are not present when Y1 or Y2 is a hydrogen atom, and Y1 and Y2 are not both hydrogen atoms.

A first sealing composition according to the present invention contains an epoxy resin, a curing agent, an inorganic filler and an uncalcined hydrotalcite compound having a molar ratio of Mg ions to Al ions (Mg / Al) of 2.4 or more. A second sealing composition according to the present invention contains an epoxy resin, a curing agent, a hydrotalcite compound represented by general formula (1) Mg1-xAlx(OH)2(CO3)x / 2mH2O (wherein each of x and m independently represents a positive number), and a magnesium-containing compound that is different from the hydrotalcite compound. A third sealing composition according to the present invention contains an epoxy resin, a curing agent, a hydrotalcite compound represented by general formula (1), and magnesium oxide; and the content of the magnesium oxideis from 1 part by mass to 50 parts by mass relative to 100 parts by mass of the epoxy resin.

A multilayer ceramic capacitor includes a body having a dielectric layer and internal electrodes disposed to be alternately exposed to the third and fourth surfaces with the dielectric layer interposed therebetween. External electrodes include connection parts respectively formed on opposing surfaces of the body, band parts formed to extend from the connection parts to portions of side surfaces of the body, and corner parts in which the connection parts and the band parts are contiguous. A thickness of each of the external electrodes may be 50 nm to 2 μm. The external electrodes may be formed using a barrel-type sputtering method. A ratio t2 / t1 may satisfy 0.7 to 1.2, where t1 is a thickness of each connection part and t2 is a thickness of each band part. A ratio t3 / t1 may satisfy 0.7 to 1.0, where t3 is a thickness of each corner part.

An organic EL device (100A) comprises a peripheral region (R2) and an active region (R1) containing a plurality of organic EL elements (3), and includes an element substrate (20) having a plurality oforganic EL elements, and a thin film seal structure (10A) covering the plurality of organic EL elements. The thin film seal structure comprises a first inorganic barrier layer (12), an organic barrier layer (14) in contact with the upper surface of the first inorganic barrier layer, and a second inorganic barrier layer (16) in contact with the upper surface of the first inorganic barrier layer and the upper surface of the organic barrier layer. The peripheral region comprises a first protruding structure (22a) containing a section extending along at least one edge of the active region, and anextending section (12e) of the first inorganic barrier layer extending over the first protruding structure. The first protruding structure includes a first part and second part. The first part is closer to the top portion of the first protruding structure than the second part and, as observed from the normal direction to the base board, a cross section parallel to the substrate surface of the first part includes a part that does not overlap with the cross section parallel to the substrate surface of the second part.

A multilayer capacitor includes a body including an internal electrode alternately disposed with a dielectric layer, and an external electrode disposed on the body. The external electrode includes a first electrode layer contacting the internal electrode, an oxide layer disposed on the first electrode layer and including a metal oxide and glass, and a second electrode layer disposed on the oxide layer.