Nano pitch templet and preparation method thereof

A pitch and template technology, applied in the field of nano-pitch template and its preparation, can solve the problems of low processing speed, harsh processing conditions, poor repeatability, etc., and achieve the effect of small nominal pitch and widening application range.

Inactive Publication Date: 2006-12-27
XI AN JIAOTONG UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The level of nano-pitch templates prepared by microfabrication technology depends on the development of plate making technology, pattern transfer technology, etching technology, etc. These technologies have strict environmental requirements, harsh processing conditions and high costs
In recent years, the lithography technology based on the scanning probe microscope has been developed and can also be used for the preparation of nano-pitch templates, but the process speed is low and the repeatability is poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano pitch templet and preparation method thereof
  • Nano pitch templet and preparation method thereof
  • Nano pitch templet and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0017] see figure 1 , the nano-pitch template of the present invention includes two alternately deposited multi-layer Si 3 N 4 Silicon wafers (11, 12) of film and Cr film, left and right clamping blocks (13, 16) for clamping silicon wafers and screws (14) connecting left and right clamping blocks (13, 16), And the epoxy resin (15) that solidifies in the groove of left and right clamping block (13,16) is formed.

[0018] The preparation method of the present invention is as follows:

[0019] see figure 2 , image 3 , 1) The silicon chip is immersed in toluene, acetone, deionized water successively and ultrasonically cleaned for 10 minutes. After each ultrasonic cleaning, it is repeatedly cleaned with a large amount of deionized water, and finally dried with nitrogen; then the silicon chip is put into the Piranha solution for 80 Treat at ℃ for 60 minutes, take it out, rinse it fully with a large amount of deionized water, and dry it with high-purity nitrogen; the Piranha s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a nanometer pitch copy and relative preparing method. First, the plasma enhancing chemical vapor deposition (CVD) craft and the radio-frequency magnetron sputtering craft alternating deposit multiple Si3N4 film and Cr film on the silicon chip; second, scribing the silicon chip and jointing their surfaces that deposited with multi-ply film face-to-face; third, clamping the silicon chips by right and left grip blocks, to make the sections of silicon chips with multiple films as the surface of nanometer pitch copy; then, injecting epoxies resin into the groove formed by right and left grip blocks and solidifying it; at last, using metallographic paper and alumina suspension to sand, buffer, and clean said sections in turn to form a nanometer pitch copy surface to obtain the nanometer pitch copy with required nominal value.

Description

technical field [0001] The invention belongs to the micro-nano testing technology, in particular to a nano-pitch template used for the measurement of the nano-pitch and the non-real-time calibration of the pitch in a nano-metering system and a preparation method thereof. Background technique [0002] The nano-pitch template and the preparation method thereof belong to the field of micro-nano testing technology, and are widely used in the fields of semiconductor, flat panel display, high-density memory, precision instrument and precision machinery, ultra-precision processing and the like. The nano-pitch template can be used for the measurement and control of micro-nano line width and pitch, as well as the calibration and traceability of related nanometer measuring instruments. In the measurement of nanopitch and line width, the nanopitch template can provide a nanopitch benchmark, through which the pitch data obtained by different methods, different instruments at different p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/00G01B9/04G01N13/10G01N23/00G01Q40/02
Inventor 景蔚萱蒋庄德朱明智赵凤霞韩国强
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products