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Etching method for forming contact window

A contact window and etching technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as affecting performance, changing the shape of opening contours, and poor removal efficiency of photoresist

Inactive Publication Date: 2006-12-27
UNITED MICROELECTRONICS CORP
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  • Summary
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  • Description
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Problems solved by technology

However, due to the poor removal efficiency of nitrogen / hydrogen plasma for photoresist, there is often a problem of annoying photoresist residue; in addition, nitrogen / hydrogen plasma often removes Accidentally remove part of the dielectric layer or change the shape of the opening outline during the photoresist process, which affects the overall performance

Method used

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  • Etching method for forming contact window
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  • Etching method for forming contact window

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Embodiment Construction

[0031] Figure 1A to Figure 1F A schematic cross-sectional view of an etching process for forming a contact window opening is shown according to a preferred embodiment of the present invention.

[0032] Please refer to Figure 1A Firstly, a semiconductor substrate 100 including at least one element 103 is provided; the substrate 100 is only schematically drawn and many other elements or structures are omitted. The device 103 on the substrate 100 is, for example, a gate structure having a gate oxide layer 101a and a polysilicon layer 102a. The method for forming the gate structure can be used to sequentially form a gate oxide layer and a polysilicon layer (not shown) on the substrate 100 and define the gate oxide layer and the polysilicon layer to form the gate structure 103 . The steps for defining and forming the gate structure 103 include photolithography, etching and the like. In addition, spacers 104 may be formed on sidewalls of the gate structure 103 and source / drain r...

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Abstract

The related etching method to form contact window opening comprises: with a substrate at least with a grid, forming in turns a metal silicide layer, a protective layer, a dielectric layer, a mask, and a figured photoresist layer. This invention has no damage to the silicide layer, and no photoresist residue.

Description

technical field [0001] The invention relates to an etching method for forming an opening, in particular to an etching method for forming a contact window opening which reduces or prevents metal silicide damage. Background technique [0002] As the density of semiconductor components increases, the patterns and line widths in the components also gradually shrink, resulting in an increase in the contact resistance between the gate and the wires in the component, resulting in a longer resistance-capacitance delay (RC Delay), which affects the operating speed of the component. . Since the resistance of metal silicide is lower than that of polysilicon, and its thermal stability is higher than that of general interconnection materials (such as aluminum), in order to reduce the sheet resistance of the drain (Drain) and source (Source), And to ensure the integrity of the shallow junction (Shallow Junction) between the metal and the semiconductor element, a metal silicide (Metalsili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/768H01L21/28C23F1/12
Inventor 周珮玉
Owner UNITED MICROELECTRONICS CORP
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