Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for depositing TiN thin film on base plate of glass

A technology for glass substrates and thin films is applied in the field of depositing TiN thin films on glass substrates, which can solve the problems of cumbersome operation process and achieve the effect of simple process.

Inactive Publication Date: 2007-02-21
ZHEJIANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods are used to control the properties of the film, and the operation process is relatively cumbersome.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for depositing TiN thin film on base plate of glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0017] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, the reaction chamber is evacuated to -0.02Mpa (MPa), and the N 2 Clean the reaction chamber;

[0018] 3) Adjust the distance between the nozzle and the glass substrate to be 5cm;

[0019] 4) Heating the reaction chamber to 600°C;

[0020] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa (megapascal), the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0021] The resistivity of the prepared TiN film is 1.5×10 4 μΩ.cm, the reflectivity in the infrared region is 45%, and with the increase of wavelength,...

Embodiment 2

[0023] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0024] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, the reaction chamber is evacuated to -0.02Mpa (MPa), and the N 2 Clean the reaction chamber;

[0025] 3) Adjust the distance between the nozzle and the glass substrate to be 25cm;

[0026] 4) Heating the reaction chamber to 600°C;

[0027] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa (megapascal), the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0028] The prepared TiN thin film is non-conductive and has a reflectivity of 35% in the infrared region, and the emissivity of the thin film tends to ...

Embodiment 3

[0030] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0031] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, the reaction chamber is evacuated to -0.02Mpa (MPa), and the N 2 Clean the reaction chamber;

[0032] 3) Adjust the distance between the nozzle and the glass substrate to be 13cm;

[0033] 4) Heating the reaction chamber to 600°C;

[0034] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa (megapascal), the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0035] The resistivity of the prepared TiN film is 7.5×10 3 μΩ.cm, the reflectivity in the infrared region can reach more than 50%, and it shows an up...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a method for depositing TiN thin film on glass substrate. The method comprises: (1) placing cleaned glass substrate on a graphite support in a chemical vapor deposition chamber, evacuating to -0.02 MPa, and introducing N2 to clean the chamber; (2) adjusting the distance between the intake nozzle and the glass substrate to be 5-25 cm; (3) introducing reactive gases of TiCl4, NH3 and N2 into the chamber, depositing at 600 deg.C, and cooling after the deposition. The method has such advantage as simple process. The resistivity, surface morphology and optic properties of TiN thin film ddeposited can be controlled by adjusting the distance between the intake nozzle and the glass substrate.

Description

technical field [0001] The invention discloses a method for depositing a TiN thin film on a glass substrate. Background technique [0002] With the rapid development of science and technology and economy in the world, the consumption of energy is increasing day by day, which makes the problem of energy crisis increasingly prominent. As a national strategic issue, energy conservation has attracted widespread attention from all over the world. The development of architectural technology has made the proportion of glass in buildings more and more large, and even some high-rise buildings have adopted the structure of all-glass exterior walls in order to obtain a beautiful and elegant modern architectural aesthetic effect. Ordinary colorless glass is a good building material. Using it as a window is both beautiful and practical. It can pass through about 90% of solar radiation, but it also passes through near-infrared and mid-to-far infrared rays while it passes through visible l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C17/22
Inventor 赵高凌张天播郑鹏飞韩高荣
Owner ZHEJIANG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com