High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel

A ferroelectric memory, high-resistance technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of loss, can not meet the rapid development of the information industry, etc. The effect of crosstalk effects

Inactive Publication Date: 2007-02-28
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limits of physics and technology, they can no longer meet the further rapid development of the information industry.
and E 2 PROM and FLASH store information based on electronic charges, which will be lost under the radiation conditions of electromagnetic waves or various rays; therefore, new storage media must be sought and developed

Method used

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  • High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel
  • High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel
  • High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel

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Embodiment Construction

[0020] The invention provides a high-speed and highly radiation-resistant ferroelectric memory based on strained SiGe channels to address the deficiencies of the prior art. The present invention will be described below in conjunction with the accompanying drawings.

[0021] In the unit structure and circuit diagram of the FeRAM 2T2C based on strained SiGe shown in Figure 2 and Figure 3, the unit structure of the ferroelectric memory is composed of M1 tubes connected in series with ferroelectric capacitors Cf1 and M2 connected in series with ferroelectric capacitors Cf2, and then two Two ferroelectric capacitors are connected together and then connected to the drive line PL, the gates of M1 and M2 are connected in series and then connected to the word line WL, and the source (or drain) electrodes of M1 and M2 are respectively connected to the bit line BL and the bit line BLB ; BL, BLB are connected with the sense amplifier SA again, where M1 and M2 are N-MOS tubes.

[0022] In...

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Abstract

The invention relates to a high-speed high-anti-radiation ferroelectric memory, based on strain SiGe groove, wherein the unit structure of memory is formed by using M1 tube to serially connect ferroelectric capacitor Cf1 and using M2 to serially connect ferroelectric capacitor Cf2; then connecting two capacitors to connect the driving line PL; the grids of M1 and M2 are serially connected to connect the word line WL; the sources or drains of M1 and M2 are connected to the bit line BL and bit line BLB; BL, BLB are connected to the sensitivity amplifier SA; M1 and M2 are N-MOS tubes. The invention uses strain SiGe as the groove of P-MOS tube, to improve the cavity transfer rate of groove, improve the working speed of P-MOS tube, to match the speed of N-MOS. Therefore, the inventive ferroelectric memory has low power consumption, high-speed storage, and high safety.

Description

technical field [0001] The invention belongs to the scope of microelectronic devices, in particular to a ferroelectric memory with high speed and high radiation resistance based on strained SiGe channels. Background technique [0002] With the development of the microelectronics industry, information security and intellectual property protection have received extensive attention. Especially in the development of defense industry devices, a high-efficiency, low-cost and safe storage technology is required. Therefore, it is particularly important to seek new types of memory with high speed, low power consumption, high security and non-volatile characteristics. [0003] Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limitations of physics and technology, they can no longer meet the further rapid development of the information industry. and E 2 PROM and FLASH store information based on electronic charges, which wil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22H01L27/115H01L29/78
Inventor 刘道广任天令谢丹许军刘理天陈弘毅徐世六
Owner TSINGHUA UNIV
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