High-speed, high-irradiation-resistant ferroelectric memory based on strained sige channel

Abstract

The invention discloses a high-speed and highly radiation-resistant ferroelectric memory based on a strained SiGe channel, which belongs to the scope of microelectronic devices. The unit structure of the ferroelectric memory is to connect the ferroelectric capacitor Cf1 and M2 in series with the ferroelectric capacitor Cf2 by the M1 tube, and then connect the two ferroelectric capacitors together and connect them to the drive line PL. After the gates of M1 and M2 are connected in series Connected to the word line WL, the sources or drains of M1 and M2 are respectively connected to the bit line BL and the bit line BLB; BL and BLB are connected to the sense amplifier SA, wherein M1 and M2 are N-MOS transistors. In the present invention, the strained SiGe is used as the channel of the P-MOS tube, and the mobility of holes in the channel is increased, thereby increasing the working speed of the P-MOS tube so as to match the speed of the N-MOS tube. It has outstanding advantages such as volatility, low power consumption, high-speed access, high rewrite resistance, and high security. It is widely used and is expected to replace the existing semiconductor memory. It has great market potential.

Description

technical field [0001] The invention belongs to the scope of microelectronic devices, in particular to a ferroelectric memory with high speed and high radiation resistance based on strained SiGe channels. Background technique [0002] With the development of the microelectronics industry, information security and intellectual property protection have received extensive attention. Especially in the development of defense industry devices, a high-efficiency, low-cost and safe storage technology is required. Therefore, it is particularly important to seek new types of memory with high speed, low power consumption, high security and non-volatile characteristics. [0003] Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limitations of physics and technology, they can no longer meet the further rapid development of the information industry. and E 2 PROM and FLASH store information based on electronic charges, which wil...

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Problems solved by technology

[0003] Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limits of physics and technology, they can no longer meet the further rapid development of the information industry.

and E 2 PROM and FLASH store information based on electronic charges, which will be lost under the radiation conditions of electromagnetic waves or various rays; therefore, new storage media must be sought and developed

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