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Process capable of improving film uniformity before chemical mechanical grinding

A thin film uniformity, chemical mechanical technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of reliability impact, excessive etching, and metal inability to connect, etc., to improve uniformity, Guaranteed consistent effect

Inactive Publication Date: 2007-03-07
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the uniformity of the film before etching is not good, some places are thick and some places are thin, which will lead to problems such as excessive or too little etching
If the etching is too little, the through hole will not be opened, so that the metal of the upper layer and the lower layer cannot be connected, resulting in Yield loss (decreased yield)
Excessive etching will make the subsequent tungsten deposition, WF 6 (Tungsten hexafluoride) reacts with aluminum, which affects reliability, especially the electromigration characteristics of Al.

Method used

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  • Process capable of improving film uniformity before chemical mechanical grinding
  • Process capable of improving film uniformity before chemical mechanical grinding
  • Process capable of improving film uniformity before chemical mechanical grinding

Examples

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Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with specific embodiments.

[0021] As shown in Figure 1, the thin film of the silicon wafer after HDP deposition before parameter adjustment tends to be thicker in the middle of the silicon wafer, thinner in the inner ring, and thicker in the outer ring. Generally speaking, if the thickness of the middle and outer rings is the same after HDP deposition, It can be considered that there is little room for optimization of its uniformity. As shown in Figure 3, since TEOS (tetraethylorthosilicate) is usually used as the precursor of PECVD (Plasma Assisted Chemical Vapor Deposition), generally the middle of the silicon wafer is thicker, the outer ring is thinner, and the inner ring is second. The superposition of films deposited by HDP CVD and TEOS PECVD will make the uniformity of the films before CMP poor, as shown in Figure 4, which is the result of the superposition of Figures 1 and 3, and the middle ...

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Abstract

This invention relates to one process to improve CMP front film in the semiconductor integration circuit, which adjusts HDP CVD depositions parameters and overlaps the HDP CVD and TEOS PECVD film to effectively improve CMP film even property.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and relates to a technology capable of improving the uniformity of a thin film before CMP (Chemical Mechanical Polishing). Background technique [0002] In traditional Al (aluminum) interconnection technology, metal Al is filled with a dielectric after etching. There are different implementation methods at different process nodes. In the early days, for metal line pitch > 0.5um, aspect ratio < 0.8, the more typical method is deposition / sputtering / deposition. The first is to use TEOS (tetraethyl orthosilicate) as a precursor to use PECVD (plasma-assisted chemical vapor deposition) SiO 2 (Silicon dioxide), followed by Ar (argon) sputtering etch to make the opening larger, and then the deposition of TEOS as the precursor to fill the gaps between the Al strips. With the development of technology, PECVD / SACVD (plasma-assisted chemical vapor de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316C23C16/44
Inventor 胡正军
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT