Method for preparing thickness controllable trilayer type diamond membrane

A technology of diamond thin film and thin film, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., to achieve the effect of large thickness

Inactive Publication Date: 2007-03-14
SHANGHAI UNIV
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[0004] The purpose of the present invention is to provide a method for preparing a three-layer diamond film with

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  • Method for preparing thickness controllable trilayer type diamond membrane
  • Method for preparing thickness controllable trilayer type diamond membrane

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Embodiment 1

[0039] Process and steps in the present embodiment are as follows:

[0040] 1. Pretreatment of silicon wafer substrate: put a 10×10mm silicon wafer in HF solution for 5 minutes to remove the surface oxide layer of the silicon wafer, and then manually grind it with ultra-fine diamond powder with a particle size of 100nm for 15 minutes to make Very fine uniform scratches are formed on the surface, and finally the surface is cleaned repeatedly with acetone and deionized water respectively;

[0041] 2. Utilize the traditional and existing hot wire chemical vapor deposition experimental device for three-stage three-layer deposition of diamond film (see Figure 1):

[0042] (1) Deposition of the first layer of diamond film in the first stage: This is the deposition of the first layer of diamond film on the treated silicon wafer substrate placed on the sample stage, and it is also the crystal bottom layer of the entire three-layer film ;The silicon wafer substrate is placed 8mm away ...

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Abstract

The present invention is preparation process of three-layer diamond film in controllable thickness, belongs to the field of chemical vapor deposition technology of inorganic non-metal material, and aims at obtaining diameter film with proper roughness and thickness simultaneously. In an available chemical vapor deposition plant with hot filament and by means of regulating the carbon source concentration, depositing temperature, reaction pressure, applied bias and other parameters, three-layer diamond film is deposited on silicon chip. The present invention makes it possible to produce thick and flat diamond film without need of the post polishing treatment on the film.

Description

technical field [0001] The invention relates to a method for preparing a three-layer diamond film with controllable thickness, and belongs to the technical field of chemical vapor deposition of inorganic non-metallic materials. Background technique [0002] The research and development of chemical vapor deposition (CVD) diamond thin film technology has greatly broadened the application range of diamond, the most notable of which is the application in the manufacture of electronic devices and integrated circuits. In addition to having the highest hardness, diamond also has a large forbidden band (5.5eV), a large electron saturation velocity (2.5×10 7 cm / s), large surface acoustic wave propagation velocity (more than 10 4 m / s), high breakdown field strength (3.5×10 6 Vcm) and low dielectric constant (5.7), as well as the highest thermal conductivity (20W / cmK), its performance is far superior to that of silicon semiconductors that are currently widely used. Judging from the ...

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Application Information

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IPC IPC(8): C23C16/27C23C16/02C23C16/50C23C16/52
Inventor 王林军夏义本赵平刘健敏苏青峰
Owner SHANGHAI UNIV
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