Exposure method and apparatus for immersion lithography
A lithography and fluid technology, applied in photography, microlithography exposure equipment, instruments, etc., can solve problems such as wafer defects, inconvenience, and inferior quality, and achieve the effect of removing static charges
Active Publication Date: 2007-04-18
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
These contaminant particles may transfer to the surface of the wafer and cause wafer defects or deterioration
[0003] It can be seen that the above-mentioned existing immersion lithography method obviously still has inconvenience and defects, and needs to be further improved urgently.
In order to solve the problems existing in the immersion lithography method, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and generally there is no suitable method to solve the above problems. Obviously, it is a problem that relevant industry players are eager to solve.
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[0023] In order to further explain the technical means and effects of the present invention in order to achieve the intended purpose of the invention, the specific implementation, steps, features and details of the immersion lithography method and system proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. Its effect is described in detail below.
[0024] FIG. 1 shows a structural diagram of an immersion lithography system according to a preferred embodiment of the present invention. In the immersion lithography system 100 , the substrate 110 is a semiconductor wafer, and its material can be elemental semiconductor, compound semiconductor, alloy semiconductor or a combination thereof. The half wafer may have more than one material layer, such as a patterned polysilicon layer, a metal layer and / or a dielectric layer. The substrate 110 may further have a photoresist layer 120 . The photores...
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Abstract
The invention relates to an exposure method and apparatus for immersion lithography including providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid. The immersion lithography apparatus comprises: an imaging lens module having a front surface; a stage configured underlying the front surface of the imaging lens; a fluid retaining module configured to hold a fluid at least partially filling a space between the front surface and a substrate on the substrate stage; and a discharge element configured for reducing electrostatic discharge. The inventive exposure method and apparatus for immersion lithography effectively removes the electrostatic charge accumulated in an exposing process by using a conductive fluid as the immersion fluid.
Description
technical field [0001] The invention relates to an exposure method and an exposure system, in particular to an immersion lithography method and an exposure system. Background technique [0002] Semiconductor manufacturing technology began to adopt the method of immersion lithography to push the line width down to 65nm, 45nm or even smaller linewidth. However, in the exposure process of immersion lithography, flowing water easily introduces static electricity. The accumulated static charge tends to cause contamination particles to attach to the surface of the immersion lithography system. These contaminant particles may be transferred to the surface of the wafer to cause wafer defects or deterioration. [0003] It can be seen that the above-mentioned existing immersion lithography method obviously still has inconveniences and defects, and needs to be further improved urgently. In order to solve the problems existing in the immersion lithography method, the relevant manufac...
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Patent Timeline
Login to View More IPC IPC(8): G03F7/20G03F7/26H01L21/027
CPCG03F7/70341G03F7/2041G03F7/70941G03F7/70908
Inventor 张庆裕林进祥林本坚鲁定中
Owner TAIWAN SEMICON MFG CO LTD