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Method of manufacturing thin flim capacitor and printed circuit board embedded capacitor

A technology of film capacitors and printed circuit boards, which is applied to printed circuit boards (PCBs) of film capacitors. It can solve problems such as capacitor degradation and damage to BDV characteristics

Inactive Publication Date: 2007-04-18
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there is a defect that the metal foil exerts pressure on the dielectric layer, which creates defects in the interface between the metal foil and the dielectric layer, which in turn impairs the BDV characteristics
[0020] However, although pre-annealing is performed in an oxygen-free atmosphere, there is a problem that copper is gradually oxidized, resulting in rapid degradation of capacitance

Method used

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  • Method of manufacturing thin flim capacitor and printed circuit board embedded capacitor
  • Method of manufacturing thin flim capacitor and printed circuit board embedded capacitor

Examples

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example 1

[0056] A 4 μm thick Ni layer (containing 8 to 12% P) was formed on the Cu foil by electroless plating. The Ni-plated Cu foil was recrystallized by performing heat treatment (or recrystallization heat treatment) at 300° C. for 10 minutes in ambient atmosphere. Then, a ferroelectric sol of PZT was spin-coated at 3000 rpm for 20 seconds on top of the Ni layer to form a dielectric layer. Crystallization was performed by performing heat treatment at 450° C. for 10 minutes in nitrogen gas, and then performing heat treatment at 550° C. for 30 minutes. During the heat treatment in nitrogen gas, the temperature was increased at a rate of 2°C / min, and nitrogen gas was introduced at a rate of 5 liters / min. Au was deposited on top of the heat treated dielectric layer by using a DC sputter. Electrical properties can be measured by using the Au deposit as the upper electrode. The measured electrical characteristics are depicted in FIG. 1 .

[0057] As shown in Fig. 1(a), the conventiona...

example 2

[0060] A 4 μm thick Ni layer (containing 8 to 12% P) was formed on the Cu foil by electroless plating. The Ni-plated Cu foil was recrystallized by heat treatment (or recrystallization heat treatment) in ambient atmosphere according to the conditions described in FIG. 2 .

[0061] After the recrystallization heat treatment, a ferroelectric sol of PZT was spin-coated at 3000 rpm for 20 seconds on the Ni layer to form a dielectric layer. Crystallization was performed by performing heat treatment at 450° C. for 10 minutes in nitrogen gas, and then performing heat treatment at 550° C. for 30 minutes. During the heat treatment in nitrogen gas, the temperature was increased at a rate of 2°C / min, and nitrogen gas was introduced at a rate of 5 liters / min. Au was deposited on top of the heat treated dielectric layer by using a DC sputter. Electrical properties can be measured by using the Au deposit as the upper electrode. The measured electrical properties are depicted in FIG. 2 . ...

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Abstract

A method of manufacturing a film capacitor comprising the steps of: performing a recrystallization heat treatment on a metal foil; forming a dielectric layer on the top surface of the recrystallized metal foil; performing heat treatment on the metal foil and the dielectric layer; An upper electrode is formed on the top surface of the dielectric layer. The recrystallization heat treatment prevents oxidation of the metal foil, so that heat treatment can be performed on the dielectric layer at a high temperature, thereby improving the electrical characteristics of the film capacitor and the reliability of the product.

Description

[0001] claim of priority [0002] This application claims priority from Korean Patent Application No. 2005-95957 filed in the Korean Intellectual Property Office on October 12, 2005, the entire contents of which are incorporated herein by reference. [0003] Cross References to Related Art [0004] US Patent No. 5,079,069 [0005] US Patent No. 5,261,153 [0006] US Patent No. 5,800,575 [0007] US Patent Application Publication No. 2005 / 0011857 [0008] US Patent No. 6,841,080 [0009] US Patent Application Publication No. 2003 / 0207150 [0010] US Patent Application Publication No. 2002 / 0195612 technical field [0011] The present invention relates to a method of manufacturing a thin film capacitor, and a printed circuit board (PCB) having the thin film capacitor manufactured by the method embedded therein. More particularly, the present invention relates to a method of manufacturing a film capacitor with improved capacitance characteristics and breakdown voltage (BDV)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33C23C26/00C23C28/00H01G4/12H05K1/16H05K3/46
CPCH01G4/1218H01G4/1245H01G4/33H05K1/09H05K1/162H05K2201/0175H05K2201/0179H05K2201/0355H05K2203/0353H05K2203/0369H01L27/04C23C26/00
Inventor 高旼志郑栗教朴殷台
Owner SAMSUNG ELECTRO MECHANICS CO LTD