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Grinding powder material for precision multiline cutting and abrasion

A multi-wire cutting and grinding technology, applied in the direction of fibrous fillers, etc., can solve the problems of subsurface damage layer deep, rough, and cannot be obtained at the same time, and achieve good processing adaptability, high processing speed, and weak cutting ability.

Inactive Publication Date: 2007-05-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of multi-wire cutting and grinding, cutting fluid or grinding fluid is generally used to mix high-hardness powders such as alumina or silicon carbide (hereinafter referred to as powder) for cutting and grinding (hereinafter collectively referred to as cutting and grinding process). The powder materials used in the process are all of a single nominal particle size and a single gravel shape. In use, it is often impossible to obtain the best results for several key quality points such as material removal rate, surface quality condition and wafer subsurface damage layer at the same time.
This kind of processing technology using a single powder in the precision grinding process generally has a high cutting speed, the surface will be rough, and the sub-surface damage layer will be deep, which is not conducive to the finishing requirements of the material, especially in the semiconductor wafer industry. Each process has high requirements on the surface quality; at the same time, if the particle size of the gravel is reduced to obtain a better surface quality, the cutting speed generally cannot reach the ideal level, and the efficiency is very low. An increase does not necessarily reduce the

Method used

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Examples

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Embodiment Construction

[0009] Silicon carbide granular powder with a nominal diameter of about 12 microns and columnar alumina powder with a diameter of 10 microns are mixed in a ratio of 2:1 to carry out double-sided precision grinding of compound semiconductor gallium arsenide wafer materials without changing other processing Under certain conditions, compared with the single use of granular silicon carbide powder with a nominal diameter of 12 microns for grinding, it has similar material removal speed and better surface quality, and at the same time achieved a shallower subsurface damage layer.

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PUM

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Abstract

The invention discloses a powder cutting and grinding material of precise many-line cutting and grinding manufacturing course, which is composed of two different geometrical shaped powders with one as normal particle powder and the other as column-shaped powder, wherein the grain size is between 3 and 30 um; the rate of length and diameter of column-shaped powder is between 1.5:1 and 10:1; the content of particle-shaped powder is between 5% and 95% and the content of column-shaped powder is between 95% and 5%.

Description

technical field [0001] The invention relates to the technical field of powder cutting abrasives, in particular to a powder cutting abrasives used in the precision multi-wire cutting and grinding processing of materials to play the role of cutting and grinding. technical background [0002] The invention relates to a powder abrasive which is suitable for precise multi-wire cutting and grinding of electronic materials and is added to cutting fluid and used for cutting and grinding. In the process of multi-wire cutting and grinding, cutting fluid or grinding fluid is generally used to mix high-hardness powders such as alumina or silicon carbide (hereinafter referred to as powder) for cutting and grinding (hereinafter collectively referred to as cutting and grinding process). The powder materials used in the process are all of a single nominal particle size and a single gravel shape. In use, it is often impossible to achieve the best results for several key quality points such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09C1/68
Inventor 朱蓉辉惠峰卜俊鹏郑红军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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