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Method for reducing horizontal affection area caused by quasi-molecule laser etching

A technology of excimer laser and affected area, which is applied in laser welding equipment, welding equipment, metal processing equipment, etc. The effect of perfect molecular laser micromachining technology and simple implementation method

Inactive Publication Date: 2007-07-11
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of these lateral influence zones changes the surface morphology of the sample to a certain extent, which is very unfavorable to the microfabrication process and greatly affects the quality of the micromolding of the material.

Method used

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  • Method for reducing horizontal affection area caused by quasi-molecule laser etching
  • Method for reducing horizontal affection area caused by quasi-molecule laser etching

Examples

Experimental program
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Effect test

Embodiment 2

[0030] The difference between Example 2 and Example 1 is that the liquid in the water tank 8 is methanol, and the sample 7 is etched under methanol. Methanol can replace distilled water to cool and isolate oxygen to achieve the same processing effect.

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PUM

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Abstract

The invention relates to a device for reducing horizontal affect area of molecule laser etching technique, wherein it comprises laser (1), mask (4), projection object lens (6), and sample (7). The light beam of laser (1) via the first mirror (2) and the second mirror (3) reaches mask (4), to reflect its pattern via the second mirror (5) to the object lens (6); the reduced pattern via lens (6) is imaged on the face of sample (7), to etch. The invention is characterized in that: the sample (7) is at the bottom of water groove (8); the groove (8) is filled with liquid; the etching face of sample (7) is lower than liquid level. The invention can improve the quality with simple process.

Description

technical field [0001] The invention relates to a method for reducing the lateral influence area of ​​excimer laser direct writing etching, and belongs to the field of excimer laser micromachining. Background technique [0002] Excimer laser has high photon energy, narrow pulse width, high pulse energy density, and excellent processing performance such as being able to focus to a very small spot, and has become an important processing method in the field of microfabrication. [0003] Using the advantages of excimer lasers, a large number of etching studies have been carried out on various materials. It is found that there are two situations in the mechanism of excimer laser etching: thermal effect and photochemistry, and it is not completely based on non-thermal mechanism. A certain degree of lateral influence zone is produced on the surface and inside of different samples. For example, when the excimer laser etches silicon, steel and stainless steel, traces of burning by t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/12B23K26/18B23K26/36B23K26/122B23K26/362
Inventor 姚李英刘莹陈涛左铁钏刘世炳
Owner BEIJING UNIV OF TECH
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