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Wafer and cutting method thereof

A cutting method and wafer technology, applied to electrical components, fine working devices, circuits, etc., can solve problems such as tool wear, wafer 100 defects, time-consuming, etc., to reduce loss, shorten cutting time, and simplify the process Effect

Inactive Publication Date: 2007-07-11
ADVANCED SEMICON ENG INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, since the materials of the MEMS 102 and the CMOS 104 are not the same, when the MEMS 102 and the CMOS 104 are integrally cut to form the first coordinate axis REF1 and the second coordinate axis REF2, many question
For example, if the MEMS 102 and the CMOS 104 are cut with a tool specially used for cutting glass, the CMOS 104 will bend due to the vibration of the tool, causing defects in the wafer 100
If cutting the microelectromechanical system 102 and the complementary metal oxide semiconductor 104, respectively, use a special glass cutting tool and a special silicon cutting tool, because the thickness of different tools is not the same, there will be a distance error when changing the tool, and the crystal The mass of the circle 100 affects
In addition, the process of cutting the first coordinate axis REF1 and the second coordinate axis REF2 is quite time-consuming, and it is easy to cause wear and tear of the tool, which greatly increases the production time and cost of the wafer 100

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  • Wafer and cutting method thereof
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Embodiment Construction

[0019] Fig. 3 is a flow chart of a preferred embodiment of the wafer cutting method of the present invention, and Fig. 4A to Fig. 4E are schematic diagrams of the relevant structure of the wafer cutting process according to the cutting method flow shown in Fig. 3, as shown in Fig. 3 As shown, the wafer dicing method of the present invention includes steps 302-310.

[0020] First, as shown in step 302 and FIG. 4A , a first substrate 202 and a second substrate 204 are provided. The first substrate 202 is, for example, a micro-electro-mechanical system (Micro Electronic Mechanic System, MEMS) 202, which has an upper surface 202a and a lower surface 202b. The material of the first substrate 202 is, for example, a glass plate, and preferably includes a plurality of cantilever beams 222 . The cantilever beam 222 is made of aluminum, for example, and is formed on the lower surface 202 b of the first substrate 202 . The second substrate 204 is, for example, a Complementary Metal-Oxi...

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Abstract

The invention relates to a crystal and relative cutting method, wherein said method comprises that: preparing the first and second base boards; at the back of second base board forming several correcting marks to form two reference coordinate axles; then matching the first and second base boards to obtain crystal; the right face of second base board matches the low face of first board; then cutting the first base board to form several first tool marks; cutting the second base board via two reference coordinate axles to obtain the several second tool marks. The invention uses reference coordinate axles to replace traditional reference coordinate axle. The invention can simplify the process and shorten time.

Description

【Technical field】 [0001] The present invention relates to a wafer and its cutting method, and in particular to a wafer with calibration marks and its cutting method. 【Background technique】 [0002] Please refer to the cross-sectional diagram of a conventional wafer shown in FIG. 1 . The conventional wafer 100 includes a Micro Electro-Mechanical System (Micro Electronic Mechanic System, MEMS) 102 and a Complementary Metal-Oxide Semiconductor (Complementary Metal-Oxide Semiconductor, CMOS) 104 . The MEMS 102 is a glass plate with an upper surface 102a and a lower surface 102b. The CMOS 104 is a silicon plate with a front side 104a and a back side 104b. The bottom surface 102 b of the MEMS 102 is separated from the front surface 104 a of the CMOS 104 by a gap 106 . The colloid 112 is filled in part of the gap 106 to match and combine the MEMS 102 and the CMOS 104 . [0003] The conventional dicing method of the wafer 100 is to first form a plurality of first knife marks 122 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00H01L21/78
Inventor 陈建宇
Owner ADVANCED SEMICON ENG INC