A low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
a technology of silicon compounds and dielectric constants, which is applied in the direction of chemical vapor deposition coating, semiconductor/solid-state device details, coatings, etc., can solve the problems of new integrated circuit manufacturing process problems, damage device structures, and little or no improvement in the overall stack dielectric constant and capacitive coupling
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example
[0076] The following example demonstrates deposition of an oxidized organo silane film having excellent barrier and adhesion properties. This example was undertaken using a chemical vapor deposition chamber, and in particular, a "CENTURA DxZ" system which includes a solid-state RF matching unit with a two-piece quartz process kit, both fabricated and sold by Applied Materials, Inc., Santa Clara, Calif.
[0077] An oxidized methyl silane film was deposited at a chamber pressure of 3.0 Torr and temperature of 0.degree. C. from reactive gases which were flown into the reactor as follows:
1 Methyl silane, CH.sub.3SiH.sub.3, at 55 sccm Nitrous oxide, N.sub.2O, at 300 sccm Helium, He, at 4000 sccm.
[0078] The substrate was positioned 600 mil from the gas distribution showerhead and 80 W of high frequency power (13 MHz) was applied to the showerhead for plasma enhanced deposition of an oxidized methyl silane layer.
[0079] The oxidized methyl silane material was deposited at a rate of 1800 .ANG.....
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
feature sizes | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com