Memory device and method of fabrication thereof

Abstract

A memory device and a fabrication method therefor. In order to improve an operation property of a magnetic RAM (abbreviated as "MRAM') having a higher speed than an SRAM, integration as high as a DRAM, and a property of a nonvolatile memory such as a flash memory, an oxide film is thinly formed on a second word line which is a write line, and an MTJ cell is formed according to a succeeding process. The MRAM is formed by reducing a distance between the write line and the MTJ cell. It is thus possible to perform a write operation with a small current.

Description

[0001] A magnetic random access memory (abbreviated as `MRAM`) is disclosed more specifically, an improved MRAM having a higher speed than an SRAM, integration density as high as a DRAM, and a property of a nonvolatile memory such as a flash memory is disclosed.DESCRIPTION OF THE RELATED ART[0002] Most of the semiconductor memory manufacturing companies have developed the MRAM using a ferromagnetic material as one of the next generation memory devices.[0003] The MRAM is a memory device for reading and writing information by forming multi-layer ferromagnetic thin films, and for sensing current variations according to a magnetization direction of the respective thin film. The MRAM has a high speed, low power consumption and allows high integration density by the special properties of the magnetic thin film, and performs a nonvolatile memory operation such as a flash memory.[0004] The MRAM embodies a memory device by using a giant magneto resistive (abbreviated as `GMR`) phenomenon or ...

AI Technical Summary

Benefits of technology

[0022] Accordingly, a memory device and a fabrication method therefor are disclosed which can perform a write operation with a small current by decreasing a distance between an MTJ cell and a second word line which is a write line.

Problems solved by technology

As described above, the conventional memory device and fabrication method therefor have a disadvantage in that a distance between the seed layer 51 of the lower portion of the MTJ cell 100 of the MRAM and the second word line 47 positioned therebelow is high, and thus power consumption is increased in a write operation.

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