Epitaxial oxide films via nitride conversion

Inactive Publication Date: 2003-11-06
APPL THIN FILMS INC
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  • Claims
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Benefits of technology

0095] It is observed that the oxidation process can be kinetically controlled by adjusting a parameter such as partial pressure of oxygen and/or temperature. Such control is important for obtaining smooth, crack-free oxide layers without defects associated with the conversion, i.e., spalling, cracking or bubbles due to gas elements trapped in layers. For example, epitaxial YSZ converted at 800.degree. C. under water vapor with a partial pressure of .about.0.03 atmosphere resulted in layer spallation and, gas bubble formation on oxide layer, while the X-ray characterization still showed a good biaxial texture. However, when the same conversion was done under water partial pressure of .about.10.sup.-6 atmosphere, the YSZ surface showed no evidence of spalling, microcracking or gas bubbles.
0096] The nitrides of the present invention can be oxidized in situ, (in place; e.g., within a nitride deposition chamber), or e

Problems solved by technology

There are numerous problems related to the prior art as pertains t

Method used

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  • Epitaxial oxide films via nitride conversion
  • Epitaxial oxide films via nitride conversion
  • Epitaxial oxide films via nitride conversion

Examples

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example 1

[0099] Magnetron sputtered (Zr.sub.0.8Y.sub.0.2)N (YZN) films were grown on biaxially textured Ni substrate, using a two temperature technique. Initially growth was done at 500.degree. C. until the YZN thickness reached .about.30 nm. Then the growth temperature was raised to 700.degree. C. and remained the same for rest of the deposition. Total film thickness was .about.200 nm and a deposition rate of 0.12 nm / sec. The films showed good in-plane and out-of-plane alignment. FIG. 1 shows a XRD .theta.-2.theta. scan, and FIG. 2 shows the (111) pole figure. The existence of only four peaks demonstrates a single epitaxial orientation. The location of the peaks in the (111) pole figure is consistent with a cube-on-cube epitaxial relationship. The YZN (111) phi scan showed a full-width-half-maximum (FWHM) obtained by fitting a Gaussian curve to the data to be 10.5.degree.. The FWHM is only slightly better than that of the underlying Ni with a FWHM of .about.8.2.degree.. The rocking curves F...

example 2

[0100] Magnetron sputtered (Zr.sub.0.8Y.sub.0.2)N (YZN) films were grown at a substrate temperature of .about.550.degree. C. on biaxially textured nickel substrates at a deposition rate of 0.12 nm / sec. The films had a thickness of 50 nm. The films showed in-plane and out-of-plane alignment. FIG. 3 shows a XRD .theta.-2.theta. scan, shows intense (200) peak. The presence of a (111) peak indicates that this sample has substantial out of plane texture in (200) direction but is not epitaxial. FIG. 4 shows the (111) phi-scan from same sample. The location of the peaks in the (111) phi peaks is consistent with a cube-on-cube epitaxial relationship. The YZN (111) phi scan showed a full-width-half-maximum (FWHM) obtained by fitting a Gaussian curve to the data to be 10.9.degree., indicating the grains that aligned to (200) orientation in out-of-plane direction also has some in-plane textures. The rocking curve FWHM (the out-of-plane texture) of the YZN layer was found to be 5.8.degree. in r...

example 3

[0101] Y.sub.0.5Z.sub.0.5N films have been grown on single crystal MgO using reactive magnetron sputtering in order to study the solid solution range in the YN--ZrN system. Growth was carried out in Ar--N.sub.2 mixtures. Typical growth temperatures ranged from 400.degree. C. to 800.degree. C. and typical growth rates were .about.0.2 nm / sec. For deposition of Y.sub.0.5Z.sub.0.5N, 99.95% pure Y and Zr targets were used. FIG. 5 shows .theta.-2.theta. x-ray diffraction (XRD) scan of a nominal Y.sub.0.5Z.sub.0.5N film grown on MgO. The thickness of film was 500 nm. The pattern clearly shows presence of both YN and ZrN phases suggesting a phase miscibility gap existing in the YN--ZrN pseudo-binary system.

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Abstract

The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

Description

[0001] This application is a continuation-in-part of application Ser. No. 09 / 687,940 filed on Oct. 13, 2000 and claims priority benefit therefrom.[0002] The following relate to the present invention and are hereby incorporated by reference in their entirety: U.S. Pat. No. 5,739,086 Structures Having Enhanced Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 14, 1998; U.S. Pat. No. 5,741,377 Structures Having Enhanced Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 21, 1998; U.S. Pat. No. 5,898,020 Structures Having Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 27, 1999; U.S. Pat. No. 5,958,599 Structures Having Enhanced Biaxial Texture by Goyal et al., issued Sep. 28, 1999; U.S. Pat. No. 5,964,966 Method of Forming Biaxially Textured Substrates and Devices Thereon by Goyal et al., issued Oct. 21, 1999; and U.S. Pat. No. 5,968,877; High Tc YBCO Superconductor Deposited on Biaxially Textured Ni Substra...

Claims

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Application Information

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IPC IPC(8): C23C8/02C23C14/06C23C14/08C30B29/22C30B23/02C30B33/00H01L21/318H01L39/24
CPCC23C8/02C30B23/02C30B29/38C30B33/005C30B29/225H01L39/2461C30B29/22H10N60/0632B32B15/04
Inventor SAMBASIVAN, SANKARBARNETT, SCOTT A.KIM, ILWONRECHNER, JOHN W.
Owner APPL THIN FILMS INC
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