Saturable absorber component and method for production of a saturable absorber component

Abstract

A saturable absorber component including an absorbent material located between a front mirror and a rear mirror, and a method for manufacturing a saturable absorber component. The rear mirror is a metallic buried mirror fixed by a welding joint on a heat conductive substrate. The saturable absorber can be applied to the field of high-rate optical transmission.

Description

TECHNICAL FIELD AND PRIOR ART [0001] The invention relates to a saturable absorber component for the processing of digital optical signals as well as a method for manufacturing a saturable absorber component for the processing of digital optical signals. [0002] The component according to the invention has particularly advantageous applications in the field of high-rate optical transmission (all-optical signal regeneration for transatlantic communication, modulation contrast amplification, wavelength conversion, temporal demultiplexing optical sampling, etc.). [0003] Telecommunications and information technologies are currently booming. This growth in the exchange of information requires greater and greater transmission capacities. [0004] In the case of optical signal transmission, the processing of information is done after converting an optical signal into an electrical signal. This conversion operation limits the processing capacities of the communication networks. It is thus nece...

AI Technical Summary

Problems solved by technology

This conversion operation limits the processing capacities of the communication networks.

A cancellation of the response of the component at weak signal rate, for example noise, can be obtained by creating destructive interference between the different beams reflected by the cavity.

This results in a high absorbed power which has to be evacuated to avoid deteriorating the performance of the component.

(low-temperature growth and doping) deteriorate the non-linear properties of the absorbent material.

This cavity has several inconveniences among which we can cite: the means of manufacturing which does not allow any control of the cavity parameters (a high tolerance design is thus indispensable, hence the choice of a highly asymmetric cavity (Rfb)), a high value of power absorbed by the absorbent material due to the relatively significant thickness of the material (4 μm), so as to create the impedance adaptation condition (1); a poor evacuation of the absorbed power due to the fact that the rear mirror is in direct contact with the air which is a very poor heat conductor; a poor non-linear characteristic of the transfer curve of the absorbent material due to the necessary high dosages of doping as well as to the low-temperature growth; an impossibility of controlling the parameters which control the regulating of the component speed due to the fact that the doping of the quantum wells is performed during the growth of the wells; an obligation to use a transparent growth substrate due to the fact that the light must pass through the latter through its entire thickness before reaching the cavity.

Furthermore, as previously mentioned, destructive interference must be carried out between the signal that is reflected by the front mirror and the signal which, reflected by the rear mirror, passed through the entire structure.

This destructive interference is created by setting the thickness of the phase control layer, before the depositing of the metallic mirror.

It follows that the subsequent depositing of the metallic mirror has a considerable risk of substantially modifying the state of the interference.

The performance of the component can prove to be highly deteriorated.

This greatly reduces the absorbed power and the heat effects.

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