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Thin film transistor device and method of manufacturing the same, and liquid crystal display device

a technology of thin film transistors and liquid crystal displays, which is applied in the direction of identification means, instruments, optics, etc., can solve the problems of parasitic tft operation, gate breakdown voltage of tft in the thin thickness portion is extremely deteriorated, and the area of the storage capacitor bus line is reduced, and the aperture ratio can be improved

Inactive Publication Date: 2005-07-28
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach prevents parasitic transistor operation, maintains good transistor characteristics, and simplifies the manufacturing process by reducing the number of steps required, while enabling further miniaturization and precise control over film thickness.

Problems solved by technology

Therefore, there is the problem such that, since the damage-layer 13 is generated on the surface of the island-like semiconductor film 4a, characteristics of the TFT in the thin thickness portion are deteriorated rather than characteristics of the TFT in the thick thickness portion.
As a result, there is the problem such that the gate breakdown voltage of the TFT in the thin thickness portion is extremely deteriorated.
Thus, there is the problem such that the so-called parasitic TFT is operated more quickly than the normal TFT.
As a result, the limit is placed on the miniaturization of the TFT.
As a result, these steps take much time and labor, and thus the simplification of these steps is desired.

Method used

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  • Thin film transistor device and method of manufacturing the same, and liquid crystal display device
  • Thin film transistor device and method of manufacturing the same, and liquid crystal display device
  • Thin film transistor device and method of manufacturing the same, and liquid crystal display device

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Experimental program
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Effect test

first embodiment

(Structure of the Thin Film Transistor Device)

[0076]FIG. 7 is a block diagram showing a configuration of a thin film transistor device (transmissive liquid crystal display device) according to a first embodiment of the present invention. FIG. 8 is a plan view showing a configuration of one pixel of a display portion. In this case, a liquid crystal display device in XGA (1024×768 pixels) mode will be explained in the following example. One pixel consists of three picture elements of R (red color), G (green color), and B (blue color).

[0077] The liquid crystal display device in this first embodiment composes a control circuit 101, a data driver 102, a gate driver 103, and a display portion 104. The signals of the display signals RGB, the horizontal synchronizing signal Hsync, the vertical synchronizing signal Vsync, etc. are supplied from external devices (not shown) such as the computer, etc. to this liquid crystal display device. The high voltage VH (18 V), the low voltage VL (3.3...

second embodiment

[0131] Next, a second embodiment of the present invention will be explained with reference to the drawings hereunder.

(Structure of the Thin Film Transistor Device Employed in the Liquid Crystal Display Device)

[0132] A structure of the thin film transistor device employed in the liquid crystal display device as the second embodiment will be explained with reference to the FIG. 12H hereunder. Here, since the high-voltage driving TFT has the almost same structure as the pixel TFT, the pixel TFT will be explained hereunder on behalf of them and explanation of the high-voltage driving TFT will be omitted herein. Also, since the p-type TFT has the almost same structure as the n-type TFT, its explanation will be omitted herein.

[0133] A left-side view of FIG. 12H is a sectional view showing a structure of an n-channel type low-voltage driving TFT, and a right-side view of FIG. 12H is a sectional view showing a structure of an n-channel type pixel TFT.

[0134] First, as shown in the left-...

third embodiment

[0180] Next, a structure of a thin film transistor device manufacturing method according to a third embodiment of the present invention will be explained with reference to the drawings hereunder.

[0181] In the thin film transistor device according to the third embodiment, the TFT consisting of at least any one of the n-type TFT and the p-type TFT having the thin gate insulating film (referred to as the TFT in the thin thickness portion) and the TFT consisting of at least any one of the n-type TFT and the p-type TFT having the thick gate insulating film (referred to as the TFT in the thick thickness portion) are mounted on the same substrate. Structures of the n-type TFT in the thin thickness portion and the n-type TFT in the thick thickness portion will be explained hereunder.

[0182]FIG. 16A is a plan view showing the TFT in the thin thickness portion when viewed from the upper side, and a left-side view of FIG. 14F is a sectional view taken along a IV-IV line of FIG. 16A. Also, FIG...

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Abstract

The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of forming a negative photoresist film on a first insulating film for covering a first island-like semiconductor film, forming a resist mask that has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film by exposing / developing the negative photoresist film from a back surface side of a transparent substrate, etching the first insulating film in the opening portion of the resist mask, forming a second insulating film for covering the first insulating film and a conductive film thereon, and forming a first gate electrode and a second gate electrode by patterning the conductive film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims priority of Japanese Patent Application No. 2001-388306, filed in Dec. 20, 2001, the contents being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a thin film transistor device, a method of manufacturing the same, and a liquid crystal display device and, more particularly, a thin film transistor device formed on an insulating substrate of a liquid crystal display device, or the like, a method of manufacturing the same, and a liquid crystal display device. [0004] 2. Description of the Prior Art [0005] The liquid crystal display device has features such as light weight, thin thickness, low power consumption, etc., and is put in practice in wide application fields such as the mobile terminal, the viewfinder of the video camera, the notebook-sized personal computer, etc. In particular, the active-matrix liquid cr...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G02F1/1368G02F1/136G02F1/1362G09F9/00G09F9/30G09F9/35H01L21/336H01L21/77H01L21/8238H01L21/84H01L27/08H01L27/092H01L27/12H01L29/423H01L29/786
CPCG02F1/13454H01L27/1214H01L27/1288H01L29/42384H01L27/1237H01L27/127G02F1/136
Inventor DOI, SEIJIHOTTA, KAZUSHIGEHIRANO, TAKUYAYANAI, KENICHI
Owner SHARP KK