Precursors for silica or metal silicate films

a technology of metal silicate films and precursors, which is applied in the direction of silicates, silicon compounds, organic chemistry, etc., can solve the problems of undesirable physical properties of alkoxysilanols that have been presently contemplated for manufacturing silica-metal films, and inadequate traditional silica dielectric insulating materials between those component devices and circuits

Active Publication Date: 2006-06-15
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, as component device (i.e., transistors) size shrinks and increasing densities of component devices and circuits are patterned, traditional silica dielectric insulating materials between those component devices and circuits are inadequate and the industry has sought better dielectric materials deposited at relatively low temperature.
Alkoxysilanols that have been presently contemplated for manufacturing silica-metal films have suffered from undesirable physical properties.

Method used

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  • Precursors for silica or metal silicate films

Examples

Experimental program
Comparison scheme
Effect test

example 1

Synthesis of bis(iso-propoxy)(tert-pentoxy)silanol

[0023] 20 g (0.118 mol) of SiCl4 was loaded in a 1000 ml three-neck flask with 500 ml hexanes. The flask was cooled down to −40° C. with a cold bath containing dry ice and iso-propanol. 18 ml (0.237 mol) of iso-propanol and 11.3 ml (0.118 mol) of tert-pentanol were added slowly via addition funnel. The temperature was kept at less than −20° C. 30 ml of pyridine was added to the flask slow to generate a lot of white precipitate which is pyridine.HCl. The cold bath was removed and the flask was stirred for 3 hours. Gas chromatograph / mass spectrometer (GC / MS) measurement of the reaction mixture indicated formation of bis(iso-propoxy)(tert-pentoxy)chlorosilane, plus other products. Filtration and removal of solvents resulted in about 23 g of white slurry. The white slurry was dropwise added to a solution containing 40 ml of ether, 15 ml of water, and 15 ml of pyridine at a temperatue below −20° C. until completion of the addition. The r...

example 2

Synthesis of bis(iso-propoxy)(tert-butoxy)silanol

[0024] 20 g (0.118 mol) of SiCl4 was loaded in a 1000 ml three-neck flask with 500 ml hexane. The flask was cooled down to −40° C. with a cold bath containing dry ice and iso-propanol. 11.3 ml (0.118 mol) of tert-butanol was added slowly via addition funnel. The temperature was kept at less than −20° C. 10 ml of pyridine was added to the flask slowly to generate a lot of white precipitate, which is pyridine.HCl. The cold bath was removed and the flask was stirred for 3 hours. A mixture of 18 ml iso-propanol and 20 ml pyridine were added slowly to the resulting white slurry. The reaction mixture was stirred overnight. GC / MS measurement of the reaction mixture indicated formation of bis(iso-propoxy)(tert-butoxy)chlorosilane and tris(iso-propoxy)(tert-butoxy)silane. Filtration and removal of solvents resulted in white slurry. The white slurry was dropwise added to a solution containing 50 ml of ether, 50 ml of water, and 15 ml of pyridi...

example 3

Synthesis of bis(tert-butoxy)(iso-propoxy)silanol

[0025] 20 g (0.118 mol) of SiCl4 was loaded in a 1000 ml three-neck flask with 400 ml hexane. The flask was cooled down to −40° C. with a cold bath containing dry ice and iso-propanol. 22.6 ml (0.236 mol) of tert-butanol was added slowly via addition funnel. The temperature was kept at less than −20° C. 20 ml of pyridine was added to the flask slowly to generate a lot of white precipitate, which is pyridine.HCl. The cold bath was removed and the flask was stirred overnight after removal of the cold bath. Filtration was applied to give a liquid to which 9 ml (0.118 mol) of iso-propanol was added at temperature below 40° C. 10 ml of pyridine was added slowly to the resulting white slurry. The reaction mixture was stirred for 5 hours after removal of the cold bath. Filtration and removal of solvents resulted in white slurry. The white slurry was dropwise added to a solution containing 50 ml of ether, 50 ml of water, and 15 ml of pyridin...

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Abstract

A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

Description

BACKGROUND OF THE INVENTION [0001] Alkoxysilanols are attaining increased attention in the fabrication of electronic devices, where they are reacted with metal containing precursors to deposit films of silicon and metal containing materials. Specifically, as component device (i.e., transistors) size shrinks and increasing densities of component devices and circuits are patterned, traditional silica dielectric insulating materials between those component devices and circuits are inadequate and the industry has sought better dielectric materials deposited at relatively low temperature. Alkoxysilanols reacted with metal containing compounds at temperature below 300° C. have been investigated to achieve the needed low dielectric insulating materials to electrically isolate smaller electronic component devices and circuits having increased densities and smaller overall dimensions. [0002] WO 02 / 27063 describes alkoxysilanols, such as tris-(tert-butoxy)silanol, for reaction with metals or ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C07F7/08C23C16/00C23C16/06B05D3/02
CPCC07F7/045C23C16/40C07F7/04C01B33/20C08G77/04C01B33/22C08G77/06
Inventor LEI, XINJIANRULKENS, RON
Owner VERSUM MATERIALS US LLC
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