Metal nanowire array and method for fabricating the same

a metal nanowire and array technology, applied in the field of nanomaterials, can solve the problem of relative little progress reported

Inactive Publication Date: 2007-04-26
HON HAI PRECISION IND CO LTD
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] In another embodiment, a method for fabricating a metal nanowire array includes the following steps: providing a carbon nanotube array which includes a number of carbon nanotubes; immersing the carbon nanotube array in a colloidal solution which contains a solvent and a number of metal nanocrystals dispersed in the solvent for self-assembling the metal nanocrystals on exterior surfaces of the carbon nanotubes; taking the carbon nanotube array out of the colloidal solution; and heating the metal nanocrystals on the surfaces of the carbon nanotubes in a manner such that the metal nanocrystals are fused into the metal nanowire array.

Problems solved by technology

However, relatively little progress has been reported in the third area.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal nanowire array and method for fabricating the same
  • Metal nanowire array and method for fabricating the same
  • Metal nanowire array and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

0F PREFERRED EMBODIMENTS

[0014] Referring now to FIG. 1, a metal nanowire array 100 in accordance with the preferred embodiment includes a substrate 110 and an array of metal nanowires 120 extending in a substantially common direction. Each of the metal nanowires 120 includes a core portion 122 and a cladding portion 124. The core potion 122 is enclosed in the cladding portion 124. It should be noted that the cladding portion 124 could be partially or entirely formed on / enclosing an exterior surface of the core portion 122 and which should be considered to be within the scope of the present invention. The core portion 122 may include a single carbon nanotube or a plurality of bundled carbon nanotubes. The carbon nanotubes may be formed on the substrate 110. The cladding portion 124 includes metal polycrystalline, the metal can be selected from the group consisting of gold, silver, copper, tin, nickel, and germanium. Because of the strength of the aligned structure of the metal nanowi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
timeaaaaaaaaaa
time periodaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

A method for fabricating a metal nanowire array (30) includes the following steps: providing a carbon nanotube array (10) which includes a number of carbon nanotubes (14), immersing the carbon nanotube array in a colloidal solution (20) which contains a solvent (22) and a number of metal nanocrystals (24) dispersed in the solvent so as to self-assemble the metal nanocrystals on exterior surfaces of the carbon nanotubes; taking the carbon nanotube array out of the colloidal solution; and heating the metal nanocrystals on the surfaces of the carbon nanotubes in a manner such that the metal nanocrystals are fused into a metal nanowire array.

Description

BACKGROUND [0001] 1. Technical Field [0002] The present invention relates generally to nanomaterials, and more particularly to a metal nanowire array and a method for fabricating the same. [0003] 2. Discussion of Related Art [0004] Miniaturization of integrated circuits is necessary for meeting the demand of processing data at higher speeds. Although some existing photolithography based technologies are useful in miniaturization, it is generally recognized that the existing technologies will reach their fundamental limits in the near future because of the wavelengths of the light sources used. [0005] An alternative technology is the “bottom-up” assembly of integrated arrays of nanometer-scaled circuits from metal and semiconductor nanocrystals. In respect of this alternative technology, three key objectives must be accomplished. The first is the self-assembly of nanometer-scaled structures from nanocrystals dispersed in colloidal solution. The second is the self-organization of thes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): B22F9/24B22F1/18
CPCB22F1/0025B22F1/025B22F2998/10B82Y30/00C30B5/00C30B29/02C30B29/04C30B29/60H01L2221/1094C01B31/00B22F1/0018B22F1/0547B22F1/18C01B32/00B22F1/054
Inventor TUNG, TSAI-SHIH
Owner HON HAI PRECISION IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products