Thermal sensing method and system

Abstract

The present invention provides a method for determining a hot area of an integrated circuit. A first temperature sensor in a first area of a chip is read, the chip comprising a plurality of chip areas, wherein the first area is a comparison area. The comparison area comprises at least one I / O device that is controlled to simulate other functional I / O devices on the chip. A second temperature sensor in a second area of a chip is read. The readings of the first temperature sensor and the second temperature sensor are compared. If the difference between the first temperature reading and the second temperature reading exceeds a threshold, a first error condition is indicated.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a division of, and claims the benefit of the filing date of, co-pending U.S. patent application Ser. No. 10 / 606,586 entitled THERMAL SENSING METHOD AND SYSTEM, filed Jun. 26,2003.TECHNICAL FIELD [0002] The invention relates generally to thermal sensing and, more particularly, to thermal sensing in an integrated circuit. BACKGROUND [0003] A complementary metal-oxide semiconductor (CMOS) is one type of transistor used in an integrated circuit (IC). CMOS transistors generate heat when switching from an off state to an on state, or from an on state to an off state, within the IC. If this heat is neither properly dissipated nor otherwise accounted or compensated for, the CMOS transistor can experience degradation leading to CMOS transistor failure. [0004] Silicon on insulator (SOI) technology can be employed in CMOS fabrication. Generally, SOI is a manufacturing technique in which devices are fabricated on top of a relati...

AI Technical Summary

Problems solved by technology

If this heat is neither properly dissipated nor otherwise accounted or compensated for, the CMOS transistor can experience degradation leading to CMOS transistor failure.

Calibration of temperature sensors can be time intensive and costly.

Furthermore, the measurement of heat by the temperature sensors in ICs, such as an IC manufactured using the silicon on insulator (SOI) approach, has proven problematic, due to such factors as thermal isolation of CMOS transistors in the chip.

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