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Semiconductor device, manufacturing method of semiconductor device, and RFID tag

a semiconductor device and manufacturing method technology, applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical equipment, etc., can solve the problems of production cost, processing cost, material cost, etc., and achieve the effect of high efficiency, low cost and high performan

Inactive Publication Date: 2007-07-12
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010]In view of the aforementioned problems, an object of the present invention is to provide a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof.
[0028]A semiconductor device which selectively includes a function in accordance with an application can be manufactured by using a base having a plurality of depressions and IC chips which fit depressions by using the present invention. In addition, a semiconductor device can be manufactured by using an existing facility as long as only an IC chip having an additional function may be additionally manufactured in the case where high performance or high efficiency is obtained; therefore, the semiconductor device can be manufactured at lower cost compared to the case where a high-performance IC chip is designed from the beginning.
[0029]Further, restoration can be easily performed when a defective is generated because a spare depression is formed separately from a normal depression in which an IC chip is disposed on a base. When a wiring which is electrically connected to an IC chip is formed, restoration can be easily performed by using a droplet discharging method typified by an ink-jet method.

Problems solved by technology

The production cost is a problem when a wireless chip (hereinafter referred to as an RFID tag in this specification) which transmits and receives data wirelessly is put to practical use.
One is a cost of materials and the other is a processing cost.
On the other hand, a problem of the processing cost cannot be solved as easily as the cost of materials.
In the case of using a flip chip mounting method, there is a problem in that a yield is reduced but a processing cost is increased when an IC is disposed due to the miniaturization of a production rule, that is, the miniaturization of an IC chip.
Since one RFID tag has been formed using one IC chip including the aforementioned FSA techniques so far, there has been a problem in that versatility of an IC chip has been low.
Therefore, the limited production of diversified products has been extremely difficult in terms of cost.
In addition, it has been difficult to provide an RFID tag having a required function immediately because of the dedicated design.
When a defect has been generated by a wiring defect or the like, there has been no method capable of restoring an RFID tag easily.
Therefore, when a defect has been generated in an RFID tag, there has been a problem in that a yield has been decreased because the defective tag has been discarded.

Method used

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  • Semiconductor device, manufacturing method of semiconductor device, and RFID tag
  • Semiconductor device, manufacturing method of semiconductor device, and RFID tag
  • Semiconductor device, manufacturing method of semiconductor device, and RFID tag

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embodiment modes

[0047]Embodiment modes of the present invention are hereinafter explained with reference to the drawings. However, the present invention is not limited to the following description. As is easily known to a person skilled in the art, the mode and the detail of the present invention can be variously changed without departing from the spirit and the scope of the present invention. Thus, the present invention is not interpreted as being limited to the following description of the embodiment modes. Note that the same reference numeral is commonly used to denote the same component among different drawings in structures of the present invention explained below.

[0048]In addition, the present invention can be applied to a semiconductor device which uses any of frequency mode, for example, a long wave band (135 kHz or the like), a short wave band (6.78 MHz, 13.56 MHz, 27.125 MHz, 40.68 MHz, or the like), an ultra-short wave band (433.92 MHz, 869.0 MHz, 915.0 MHz, or the like), a microwave ban...

embodiment mode 1

[0049]This embodiment mode describes a manufacturing method of a semiconductor device using a plurality of IC chips, particularly a manufacturing method of an RFID tag with reference to FIGS. 1A to 3C below.

[0050]First, a depression 101 and a depression 102 each having an arbitrary shape are formed in a base 100 (see FIG. 1A). As a material of the base 100, a synthetic resin having flexibility such as plastic which is typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or acrylic can be used. The depression 101 and the depression 102 can be formed using an embossing machine, a punching machine, or the like. The depression 101 and the depression 102 can also be formed using a laser ablation, an FIB (Focused Ion Beam), or the like.

[0051]At this time, the depression 101 and the depression 102 are preferably formed to have different shapes and sizes. This is because IC chips are selectively disposed in accordance with functions when t...

embodiment mode 2

[0071]In this embodiment mode, a manufacturing method of a semiconductor device using a plurality of IC chips, particularly a manufacturing method of an RFID tag is described below with reference to FIGS. 4A to 6B when restoration can be performed by a droplet discharging method when forming a wiring. Note that steps up to and including the state shown in FIG. 1B of Embodiment Mode 1 can be similarly used in this embodiment mode; therefore, detail description is omitted.

[0072]The state shown in FIG. 1B of Embodiment Mode 1 is obtained, and then, a protective film 405 having an insulating property is provided so as to cover a base 400, an IC chip 403, and an IC chip 404. Note that the base 400, the IC chip 403, the IC chip 404, and the protective film 405 correspond to the base 100, the IC chip 103, the IC chip 104, and the protective film 105 in FIG. 1, respectively. Here, a planarizing film having an insulating property may be formed instead of the protective film 405. The planariz...

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PUM

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Abstract

The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device, a manufacturing method of a semiconductor device, and an RFID tag.[0003]2. Description of the Related Art[0004]In recent years, wireless chips which transmit and receive data wirelessly have been developed actively. The wireless chips which transmit and receive data are called an RFID (Radio Frequency Identification) tag, an RF tag, an RF chip, a wireless tag, a wireless processor, a wireless memory, an IC (Integrated Circuit) tag, an IC label, an electronic tag, an electronic chip, or the like. Wireless chips for practical use now are wireless chips using a silicon substrate, which are the mainstream.[0005]The production cost is a problem when a wireless chip (hereinafter referred to as an RFID tag in this specification) which transmits and receives data wirelessly is put to practical use. The production cost is divided into two types. One is a cost of materials ...

Claims

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Application Information

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IPC IPC(8): H01L23/06
CPCH01L24/24H01L24/25H01L24/82H01L24/83H01L24/95H01L25/18H01L25/50H01L2223/6677H01L2224/24011H01L2224/2402H01L2224/24137H01L2224/24227H01L2224/76155H01L2224/83851H01L2224/95085H01L2224/95122H01L2924/01002H01L2924/01003H01L2924/01005H01L2924/01013H01L2924/01015H01L2924/01018H01L2924/01025H01L2924/01027H01L2924/01029H01L2924/0103H01L2924/01032H01L2924/01033H01L2924/01042H01L2924/01046H01L2924/01047H01L2924/01049H01L2924/01056H01L2924/01073H01L2924/01074H01L2924/01075H01L2924/01077H01L2924/01078H01L2924/01079H01L2924/10158H01L2924/10329H01L2924/14H01L2924/15153H01L2924/15155H01L2924/15165H01L2924/19041H01L2924/19042H01L2924/19043H01L2924/30107H01L2924/3011H01L2924/01006H01L2924/01024H01L2924/01045H01L24/19H01L2224/2929H01L2224/29344H01L2224/29355H01L2224/82102H01L2924/12032H01L2924/3512H01L2924/00H01L2924/00014H01L2924/15788H01L2924/12044H01L2924/12043H01L2924/15156H01L2224/95136
Inventor HOSOYA, KUNIOFUJIKAWA, SAISHIOKAMOTO, SATOHIRO
Owner SEMICON ENERGY LAB CO LTD