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Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory

a technology of resistance effect and magnetic head, which is applied in the direction of magnetic body, record information storage, instruments, etc., can solve the problem of excessive resistan

Inactive Publication Date: 2008-04-03
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014]It is an object of the present invention to provide a new magneto-resistance effect element which can exhibit a larger MR effect without the shift of operating point due to the low resistance and the high interlayer-coupling.
[0016]The inventors had intensely studied to achieve the above object. As a result, according to the aspect of the present invention, an intermediate layer containing insulating portions and magnetic metallic portions is provided between the first magnetic layer and the second magnetic layer to cause the magnetic coupling via the magnetic metallic portions of the intermediate layer. Then, non-ferromagnetic metal is contained in the magnetic metallic portions of the intermediate layer so that the magnetization of the magnetic metallic portions can be reduced.
[0017]As a result, since the width of the magnetic wall, which is formed in the magnetic metallic portion of the intermediate layer, is decreased in the thickness direction, the resistance change ratio, that is, the MR effect can be enhanced and the interlayer-coupling between the first magnetic layer and the second magnetic layer, which sandwich the intermediate layer, can be suppressed. Particularly, even though the diameter of the minute magnetic coupling point is increased so as to decrease the element resistance, the interlayer-coupling can be reduced.
[0020]According to the aspects of the present invention can be provided a new magneto-resistance effect element which can exhibit a larger MR effect without the shift of operating point due to the low resistance and the high interlayer-coupling.

Problems solved by technology

However, too small size of the minute magnetic coupling point may increase the resistance thereof excessively.
The increase of the interlayer-coupling causes undesirably the shift of the operating point toward the higher magnetic field at the magnetic head containing the minute magnetic coupling.

Method used

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  • Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
  • Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
  • Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0084]Example 1 relating to the magneto-resistance effect element 10 will be described. In Example 1, the magneto-resistance effect element 10 was formed as follows:[0085]Underlayer 11: Ta 5 nm / NiFeCr 7 nm[0086]Antiferromagnetic layer 12: PtMn 15 nm[0087]First pinned layer 131: Co9Fe1 3.3 nm[0088]Magnetic antiparallel coupling layer 132: Ru 0.9 nm[0089]Second pinned layer 132: Fe5Co5 2.5 nm / Cu 0.1 nm

[0090]The underlayer 11 through the second pinned layer 132 were subsequently formed. Then, the Al layer with a thickness of 0.9 nm was formed and oxidized under Ar ion atmosphere. Then, the ion treatment was carried out to form the multilayered structure of the intermediate layer 14: the Al oxide / FeCo—Cu metallic layer. Then,[0091]Free layer 15: Fe5Co5 2.5 nm[0092]Protective layer 16: Cu 1 nm / Ta 2 nm / Ru 15 nm

were formed.

[0093]The thus obtained magneto-resistance effect element 10 was thermally treated at 270° C. during ten hours under magnetic field. As a result, in Example 1, the RA of...

example 2

[0094]Example 2 relating to the magneto-resistance effect element 10 will be described. In Example 2, the magneto-resistance effect element 10 was formed as follows:[0095]Underlayer 11: Ta 5 nm / Ru 2 nm[0096]Antiferromagnetic layer 12: PtMn 15 nm[0097]First pinned layer 131: Co9Fe1 3.3 nm[0098]Magnetic antiparallel coupling layer 132: Ru 0.9 nm[0099]Second pinned layer 132: Fe5Co5 2.5 nm / Cu 0.1 nm

[0100]The underlayer 11 through the second pinned layer 132 were subsequently formed. Then, the Al layer with a thickness of 0.9 nm was formed and oxidized under Ar ion atmosphere. Then, the ion treatment was carried out to form the multilayered structure of the intermediate layer 14: the Al oxide / FeCo—Cu metallic layer. Then,[0101]Free layer 15: Fe5Co5 2.5 nm[0102]Protective layer 16: Cu 1 nm / Ta 2 nm / Ru 15 nm

were formed.

[0103]The thus obtained magneto-resistance effect element 10 was thermally treated at 270° C. during ten hours under magnetic field. As a result, in Example 2, the RA of the...

example 3

[0104]Example 3 relating to the magneto-resistance effect element 10 will be described. In Example 3, the magneto-resistance effect element 10 was formed as follows:[0105]Underlayer 11: Ta 5 nm / NiFeCr 7 nm[0106]Antiferromagnetic layer 12: PtMn 15 nm[0107]First pinned layer 131: Co9Fe1 3.3 nm[0108]Magnetic antiparallel coupling layer 132: Ru 0.9 nm[0109]Second pinned layer 132: Fe5Co5 2.5 nm / Zr 0.1 nm

[0110]The underlayer 11 through the second pinned layer 132 were subsequently formed. Then, the Al layer with a thickness of 0.9 nm was formed and oxidized under Ar ion atmosphere. Then, the ion treatment was carried out to form the multilayered structure of the intermediate layer 14: the Al oxide / FeCo—Zr metallic layer. Then,[0111]Free layer 15: Fe5Co5 2.5 nm[0112]Protective layer 16: Cu 1 nm / Ta 2 nm / Ru 15 nm

were formed.

[0113]The thus obtained magneto-resistance effect element 10 was thermally treated at 270° C. during ten hours under magnetic field. As a result, in Example 3, the RA of...

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Abstract

A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2006-265836, filed on Sep. 28, 2006; the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a magneto-resistance effect element which is configured such that a current is flowed in the direction perpendicular to the film surface thereof. The present invention also relates to a magnetic head, a magnetic recording / reproducing device and a magnetic memory which utilize the magneto-resistance effect element according to the present invention.[0004]2. Description of the Related Art[0005]Recently, the performance of a magnetic device, particularly such as a magnetic head is enhanced by means of Giant Magneto-Resistance Effect (GMR) made of a multilayered magnetic structure. Particularly, since a spin valve film (SV film) can ex...

Claims

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Application Information

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IPC IPC(8): G11B5/33
CPCB82Y25/00B82Y40/00G01R33/093G11B5/3906G11B5/398H01F10/3259G11C11/16H01F10/3272H01F41/305H01L43/08G11B5/3983G11C11/161H10N50/10
Inventor FUKE, HIROMIHASHIMOTO, SUSUMUTAKAGISHI, MASAYUKIIWASAKI, HITOSHI
Owner KK TOSHIBA
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