Method for manufacturing oxide thin film transistor
a thin film transistor and oxide technology, applied in the direction of basic electric elements, electrical apparatus, semiconductor devices, etc., can solve the problems of low product yield, complex process of making low temperature polysilicon, and failure of conventional thin film transistors to meet the needs of high display quality of display devices, etc., to achieve excellent temperature stability, low leakage current, and high electron mobility
Inactive Publication Date: 2013-06-06
E INK HLDG INC
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Benefits of technology
The method results in oxide thin film transistors with leakage currents less than 10−14 angstroms, high electron mobility, and excellent temperature stability, enhancing display quality when used in display devices.
Problems solved by technology
However, the conventional thin film transistor has some shortcomings, such as high leakage currents, low electron mobility and some of functions of integrated circuit incapable of forming on a substrate directly.
Therefore, the conventional thin film transistor fails to satisfy the needs of high display quality of the display devices.
However, the process of making the low temperature polysilicon is complicated and has a low product yield, thus the low temperature polysilicon is still not easily to be used widely.
Method used
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[0020]A display device includes a plurality of pixels. Structures of the pixels are substantially the same with each other; therefore, only one pixel would be shown illustratively to present the all pixels of the display device in the following drawings.
[0021]FIG. 1 is a schematic, side cross-sectional view of a display device according to a first embodiment of the present invention. Referring to FIG. 1, the display device 100 can be, but not limited to, an electrophoretic display device. In this embodiment, the display device 100 includes a substrate 110, an oxide thin film transistor array (not labeled) formed on the substrate 110 and a display layer 130 disposed on the oxide thin film transistor array. The oxide thin film transistor array can include a plurality of oxide thin film transistors 120, and only one of the oxide thin film transistors 120 is shown illustratively in FIG. 1.
[0022]A method for manufacturing the display device 100 would be described detailedly below. It sho...
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Abstract
A method for manufacturing an oxide thin film transistor with leakage currents less than 10−14 angstrom includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
Description
[0001]This application is a continuation application of an application Ser. No. 12 / 699,063, filed on Feb. 3, 2010, and the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Field of the Invention[0003]The present invention relates to a method for manufacturing a thin film transistor, and more particularly to a method for manufacturing an oxide thin film transistor.[0004]2. Description of the Related Art[0005]In these days, thin film transistor display devices, such as liquid crystal display devices, electrophoretic display devices and organic light emitting diode display devices, have been used more and more widely. To improve display quality of the display devices, people have always paid attention to research and development of structure and manufacturing method of a thin film transistor (TFT) that is one of core structure of the display device.[0006]A conventional thin film transistor has an active layer made of amorphous silicon (a-Si). However, th...
Claims
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IPC IPC(8): H01L21/02
CPCH01L21/02554H01L21/02565H01L29/66969H01L29/7869H01L21/02631H01L21/02617
InventorSHINN, TED-HONGWANG, HENRYSHU, FANG-ANTSAI, YAO-CHOU
OwnerE INK HLDG INC