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Methods of making patterned structures of materials, patterned structures of materials, and methods of using same

a technology of patterned structures and materials, applied in the field of patterning materials, can solve the problems of unattractive lithography community, significant swelling, intermixing or damage to the film of polymer a, and the limitation of only one self-assembled block copolymer domain size and pitch

Active Publication Date: 2014-07-24
CORNELL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides methods for patterning layers of organic polymer materials on substrates without the need for a protective layer of material. The methods also result in less degradation of the physical and chemical properties of the organic polymer materials when exposed to process steps. The patterned layers of organic polymer materials can be used in various applications such as nanolithography, organic electronic devices, and other fields. In one embodiment, a layer of polymer material formed by the present invention acts as a hard-mask to transfer the pattern of the layer to another layer of material.

Problems solved by technology

If a particular application requires a stack of two different polymers, (e.g., Polymer B on top of Polymer A), attention must be paid to the interaction of Solvent B with the dry film of Polymer A. If Solvent B is miscible with Polymer A, the result is usually a significant amount of swelling, intermixing or damage to the film of Polymer A that may be undesirable for many applications.
The block copolymer community has been limited to the use of only one block copolymer per layer due to the damage and intermixing caused by the spin coating of another block copolymer solution on top of a previously deposited copolymer film.
The limitation of only one self-assembled block copolymer domain size and pitch is not attractive to the lithography community, which has grown used to the ability to print patterns of arbitrary shapes and sizes using photolithography.

Method used

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  • Methods of making patterned structures of materials, patterned structures of materials, and methods of using same
  • Methods of making patterned structures of materials, patterned structures of materials, and methods of using same
  • Methods of making patterned structures of materials, patterned structures of materials, and methods of using same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0068]In the following example, two different block copolymers were spin-coated adjacent to each other in the same layer to demonstrate the CASP technique. Hydrofluoroether (HFE) (Novec™) solvents were obtained from 3M Co. and used as received. “OSCoR” photoresist was supplied by Orthogonal Inc. Triphenyl sulfonium triflate (TPST) photoacid generator was obtained from Aldrich and used as received. Tetramethoxymethylglycouril (TMMGU, “Powderlink 1174”) was donated by Cytec Industries. All other solvents were obtained from Aldrich and used as received. PαMS-b-PHOST block copolymers (Mn=53,000 g / mol, fPαMS˜34% (BCP1) and Mn=23,000 g / mol, fPαMS˜30% (BCP2) were synthesized as reported previously. Poly(styrene) with an —OH end group (PS—OH, Mn=10,000 g / mol, PDI=1.07) was obtained from Polymer Source (Dorval, Canada) and used as received. Single-polished Silicon wafers containing a ˜2 nm native oxide layer were obtained from WRS (Spring City, Pa.).

[0069]Silicon wafers cleaned with oxygen ...

example 2

[0078]In this example the non-interaction between the block copolymer film and hydrofluoroether (HFE) solvents was investigated for orthogonal processing

[0079]Materials. Hydrofluoroether solvents (HFEs, Novec™ Engineered Fluids) were obtained from 3M Corporation and used as received. Organic SemiConductor Resist (OSCoR) was supplied by Orthogonal Inc. Triphenyl sulfonium triflate (TPST, photoacid generator) was obtained from Sigma-Aldrich and used as received. Tetramethoxymethylglycouril (TMMGU, “Powderlink 1174”) was donated by Cytec Industries. All other solvents were obtained from Sigma-Aldrich and used as received. PαMS-b-PHOST block copolymers (Mn=53,000 g / mol, fPαMS˜34% (BCP1) and Mn=23,000 g / mol, fPαMS˜30% (BCP2) were synthesized according to known literature procedures. Hydroxyl-terminated polystyrene (PS—OH) was obtained from Polymer Source and used as received. Single-polished Silicon wafers with native oxide layer were obtained from WRS Materials.

[0080]Block Copolymer Fi...

example 3

[0089]The following is an example of a method of the present invention.

Experimental Methods

[0090]Materials. Hydrofluoroether (HFE) (Novec™) solvents were obtained from 3M Corporation and used as received. Poly(1H,1H,2H,2H-perfluorodecyl methacrylate-ran-tert-butyl methacrylate) (P(FDMA-ran-TBMA), “Ortho 310”) photoresist was supplied by Orthogonal Inc. Triphenyl sulfonium triflate (TPST) photoacid generator was obtained from Aldrich and used as received. Tetramethoxymethylglycouril (TMMGU, “Powderlink 1174”) was donated by Cytec Industries. All other solvents were obtained from Aldrich and used as received. PαMS-b-PHOST block copolymers (Mn=53,000 g / mol, fαMS˜34% (BCP1) and Mn=23,000 g / mol, fPαMS˜30% (BCP2) were synthesized according to known literature procedures. Poly(styrene) with an ˜OH end group (PS—OH) was obtained from Polymer Source (Dorval, CA) and used as received. Single-polished Silicon wafers containing a ˜2 nm native oxide layer were obtained from WRS materials (Sprin...

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Abstract

A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to U.S. provisional patent application No. 61 / 454,015, filed Mar. 18, 2011, the disclosure of which is incorporated herein by reference.STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH[0002]This invention was made with government support under grant number FA9550-09-1-0705 awarded by the Air Force Office of Scientific Research (AFOSR) MURI Program on new graphene materials technology. The United States Government has certain rights in the invention.FIELD OF THE INVENTION[0003]The present invention generally relates to methods of patterning materials. More particularly, the methods relate to patterning using a combination of additive and subtractive patterning steps (CASP).BACKGROUND OF THE INVENTION[0004]There are multiple ways to deposit functional polymer films. Spin coating has been used extensively in the field of electronics for its ability to spread solution-processable materials in smooth films over...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/16H01L21/027
CPCH01L21/027G03F7/16B81C1/00031B81C2201/0149G03F7/0002G03F7/038Y10T428/24851
Inventor SCHWARTZ, EVAN L.CHAN, WEI MINLEE, JIN-KYUNTIWARI, SANDIPOBER, CHRISTOPHER K.
Owner CORNELL UNIVERSITY
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